Power MOSFET PJSEMI PJM08C30PA N Channel and P Channel Complementary Device for Electronic Circuits

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Product Description

Product Overview

The PJM08C30PA is a N and P-Channel Complementary Power MOSFET designed for power management applications. It offers low on-resistance, low input capacitance, and fast switching speeds, making it suitable for various electronic circuits requiring efficient power control.

Product Attributes

Brand: Pingjing Semiconductor
Model: PJM08C30PA
Package: SOP-8
Revision: 3.0
Date: Oct-2022

Technical Specifications

Parameter	Symbol	N-Channel Min.	N-Channel Typ.	N-Channel Max.	N-Channel Unit	P-Channel Min.	P-Channel Typ.	P-Channel Max.	P-Channel Unit
Drain-Source Voltage	VDS	30	-	-	V	-30	-	-	V
Gate-Source Voltage	VGS	-	-	±20	V	-	-	±20	V
Drain Current-Continuous	ID	8	-	-	A	-7	-	-	A
Drain Current-Pulsed	IDM	20	-	-	A	-20	-	-	A
Maximum Power Dissipation	PD	-	-	2	W	-	-	2	W
Junction Temperature	TJ	-	-	150	°C	-	-	150	°C
Storage Temperature Range	TSTG	-55	-	+150	°C	-55	-	+150	°C
Thermal Resistance,Junction-to-Ambient	RθJA	-	-	62.5	°C/W	-	-	62.5	°C/W
Drain-Source Breakdown Voltage	V(BR)DSS	30	-	-	V	-	-	-	V
Zero Gate Voltage Drain Current	IDSS	-	-	1	μA	-	-	1	μA
Gate-Body Leakage Current	IGSS	-	-	±100	nA	-	-	±100	nA
Gate Threshold Voltage	VGS(th)	1.2	1.6	2.4	V	-	1.4	3	V
Drain-Source On-Resistance	RDS(on)	-	25	31	mΩ	-	48	60	mΩ
Forward Transconductance	gFS	-	15	-	S	5.5	-	-	S
Input Capacitance	Ciss	-	485.8	-	pF	-	650	-	pF
Output Capacitance	Coss	-	65.2	-	pF	-	105	-	pF
Reverse Transfer Capacitance	Crss	-	54	-	pF	-	65	-	pF
Turn-on Delay Time	td(on)	-	5	-	nS	-	8.5	-	nS
Turn-on Rise Time	tr	-	3	-	nS	-	4.5	-	nS
Turn-off Delay Time	td(off)	-	15	-	nS	-	26	-	nS
Turn-off Fall Time	tf	-	3.5	-	nS	-	12.5	-	nS
Total Gate Charge	Qg	-	12.6	-	nC	-	12.5	-	nC
Gate-Source Charge	Qgs	-	1.9	-	nC	-	2.8	-	nC
Gate-Drain Charge	Qg d	-	2.6	-	nC	-	2.7	-	nC
Diode Forward Voltage	VSD	-	-	1.2	V	-	-	1.2	V
Diode Forward Current	IS	-	-	5.8	A	-	-	4.1	A