750V silicon carbide fet Qorvo UJ4C075018K3S designed for high voltage power conversion applications
Product Overview
The UJ4C075018K3S is a 750V, 18mW G4 SiC FET designed for high-efficiency power conversion. This device utilizes a unique cascode circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET. Its standard gate-drive characteristics enable seamless integration as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The UJ4C075018K3S excels in applications requiring low gate charge and exceptional reverse recovery, making it ideal for switching inductive loads and general-purpose switching. Key applications include switch mode power supplies, PV inverters, EV charging, induction heating, motor drives, and power factor correction modules.
Product Attributes
- Brand: UnitedSiC (implied by datasheet context)
- Material: SiC FET (Silicon Carbide Field-Effect Transistor)
- Package: TO-247-3L
- ESD Protection: HBM class 2
Technical Specifications
| Parameter | Test Conditions | Value | Units |
|---|---|---|---|
| Maximum Ratings | |||
| Drain-source voltage (VDS) | 750 | V | |
| Gate-source voltage (VGS) | -20 to +20 | V | |
| Continuous drain current (ID) | TC = 100C | 81 | A |
| Pulsed drain current (IDM) | TC = 25C | 205 | A |
| Single pulsed avalanche energy (EAS) | L=15mH, IAS =3.6A | 97.2 | mJ |
| Power dissipation (Ptot) | TC = 25C | 385 | W |
| Maximum junction temperature (TJ,max) | 175 | C | |
| Operating and storage temperature (TJ, TSTG) | -55 to 175 | C | |
| Lead temperature for soldering (TL) | 1/8 from case for 5 seconds | 250 | C |
| Thermal Characteristics | |||
| Thermal resistance, junction-to-case (RJC) | 0.39 | C/W | |
| Electrical Characteristics (TJ = +25C unless otherwise specified) | |||
| Drain-source breakdown voltage (BVDS) | VGS=0V, ID=1mA | 750 | V |
| Total drain leakage current (IDSS) | VDS=750V, VGS=0V, TJ=25C | 1.3 | mA |
| Total drain leakage current (IDSS) | VDS=750V, VGS=0V, TJ=175C | 125 | mA |
| Total gate leakage current (IGSS) | VDS=0V, TJ=25C, VGS=-20V / +20V | 20 | A |
| Gate threshold voltage (VG(th)) | VDS=5V, ID=10mA | 4.8 | V |
| Drain-source on-resistance (RDS(on)) | VGS=12V, ID=20A, TJ=25C | 18 | mW |
| Drain-source on-resistance (RDS(on)) | VGS=12V, ID=20A, TJ=175C | 23 | mW |
| Diode continuous forward current (IS) | TC=25C | 81 | A |
| Diode pulse current (IS,pulse) | TC=25C | 205 | A |
| Forward voltage (VFSD) | VGS=0V, IF=20A, TJ=25C | 1.14 | V |
| Reverse recovery charge (Qrr) | VDS=400V, IS=50A, VGS=-0V, RG_EXT=50W, di/dt=1300A/ms, TJ=25C | 102 | nC |
| Reverse recovery charge (Qrr) | VDS=400V, IS=50A, VGS=-0V, RG_EXT=50W, di/dt=1300A/ms, TJ=150C | 109 | nC |
| Typical Performance - Dynamic | |||
| Input capacitance (Ciss) | VDS=100V, VGS=0V, f=100kHz | 1422 | pF |
| Output capacitance (Coss) | VDS=100V, VGS=0V, f=100kHz | 217 | pF |
| Reverse transfer capacitance (Crss) | VDS=100V, VGS=0V, f=100kHz | 150 | pF |
| Total gate charge (QG) | VDS=400V, ID=50A, VGS = 0V to 15V | 37.8 | nC |
| Gate-drain charge (QGD) | VDS=400V, ID=50A, VGS = 0V to 15V | 8 | nC |
| Gate-source charge (QGS) | VDS=400V, ID=50A, VGS = 0V to 15V | 11.8 | nC |
| Turn-on energy (EON) | Note 4, VDS=400V, ID=50A, Gate Driver = 0V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=50W, Inductive Load, TJ=25C | 615 | mJ |
| Turn-off energy (EOFF) | Note 4, VDS=400V, ID=50A, Gate Driver = 0V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=50W, Inductive Load, TJ=25C | 518 | mJ |
| Total switching energy (ETOTAL) | Note 4, VDS=400V, ID=50A, Gate Driver = 0V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=50W, Inductive Load, TJ=25C | 1133 | mJ |
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.