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High reliability dual digital transistor ROHM EMG3T2R with 50 volt collector emitter voltage rating

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Product Description

Product Overview

The EMG3 / UMG3N / FMG3A are common dual digital transistors designed for inverter, interface, and driver applications. These devices offer the advantage of reduced mounting cost and area by integrating two DTC143T chips within a single SOT-553 (EMT5), SOT-353 (UMT5), or SOT-25 (SMT5) package. They provide reliable performance with a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 100mA.

Product Attributes

  • Brand: ROHM
  • Type: Dual Digital Transistor

Technical Specifications

Model Package Package Size (mm) Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMG3 SOT-553 (EMT5) 1616 T2R 180 8 8000 G3
UMG3N SOT-353 (UMT5) 2021 TR 180 8 3000 G3
FMG3A SOT-25 (SMT5) 2928 T148 180 8 3000 G3

Absolute Maximum Ratings (Ta = 25C)

Parameter Symbol Values Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 100 mA
Power dissipation (EMG3/UMG3N) PD*1*2 150 (Total) mW
Power dissipation (FMG3A) PD*1*3 300 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150

Electrical Characteristics (Ta = 25C)

Parameter Conditions Min. Typ. Max. Unit
Collector-base breakdown voltage IC = 50A 50 - - V
Collector-emitter breakdown voltage IC = 1mA 50 - - V
Emitter-base breakdown voltage IE = 50A 5 - - V
Collector cut-off current VCB = 50V - - 500 nA
Emitter cut-off current VEB = 4V - - 500 nA
Collector-emitter saturation voltage IC = 5mA, IB = 0.25mA - - 300 mV
DC current gain VCE = 5V, IC = 1mA 100 250 600 -
Input resistance R1 - 3.29 4.7 6.11 k
Transition frequency VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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