600 Volt 4 Amp PFC Diode Power Integrations LXA04B600 with Low QRR and Compact TO 263AB Package Design

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Product Description

Product Overview

The LXA04T600 and LXA04B600 are Qspeed X-Series 600 V, 4 A PFC diodes offering the industry's lowest QRR for a 600V silicon diode. This design enhances efficiency, reduces EMI, and eliminates the need for snubber circuits. They are ideal for Power Factor Correction (PFC) boost diodes, motor drive circuits, and DC-AC inverters, enabling higher efficiency, smaller EMI filters, and faster switching speeds.

Product Attributes

Brand: Qspeed
Series: X-Series
Compliance: RoHS Compliant (Lead-free plating, Green mold compound, Halogen free per IEC 61249-2-21)
Package Types: TO-220AC, TO-263AB

Technical Specifications

Model	Package	IF(AVG) (A)	VRRM (V)	QRR Typ at 125 C (nC)	IRRM Typ at 125 C (A)	Softness tb/ta Typ at 125 C	Max Junction Temp (C)	Storage Temp (C)	Power Dissipation (W)
LXA04T600	TO-220AC	4	600	50	2.6	0.8	150	-55 to 150	52
LXA04B600	TO-263AB	4	600	50	2.6	0.8	150	-55 to 150	52

Symbol	Parameter	Conditions	Min	Typ	Max	Units
DC Characteristics
IR	Reverse current	VR = 600V, TJ = 25 C	-	-	250	A
IR	Reverse current	VR = 600V, TJ = 125 C	-	0.45	-	mA
VF	Forward voltage	IF = 4A, TJ = 25 C	-	2.42	2.96	V
VF	Forward voltage	IF = 4A, TJ = 150 C	-	2.10	-	V
CJ	Junction capacitance	VR = 10V, 1 MHz	-	21	-	pF
Dynamic Characteristics
tRR	Reverse recovery time	dI/dt =200 A/s, VR=400 V, IF=4 A, TJ=25 C	-	18.5	-	ns
tRR	Reverse recovery time	dI/dt =200 A/s, VR=400 V, IF=4 A, TJ=125 C	-	27.5	-	ns
QRR	Reverse recovery charge	dI/dt =200A/s, VR=400 V, IF=4 A, TJ=25 C	-	21.1	29.0	nC
QRR	Reverse recovery charge	dI/dt =200A/s, VR=400 V, IF=4 A, TJ =125 C	-	50.0	-	nC
IRRM	Maximum reverse recovery current	dI/dt =200 A/s, VR=400 V, IF=4 A, TJ =25 C	-	1.75	2.3	A
IRRM	Maximum reverse recovery current	dI/dt =200 A/s, VR=400 V, IF=4 A, TJ=125 C	-	2.6	-	A
S	Softness factor	dI/dt =200 A/s, VR=400 , IF=4 A, TJ =25 C	-	0.8	-	-
S	Softness factor	dI/dt =200 A/s, VR=400 , IF=4 A, TJ=125 C	-	0.8	-	-