Qspeed Family Power Integrations LQA40B150C 150 V 40 A Diode for High Reliability Applications

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Product Description

Qspeed Family 150 V, 40 A Common-Cathode Diode

The LQA40T150C and LQA40B150C are 150 V, 40 A common-cathode diodes from the Qspeed family, offering the lowest QRR of any 150 V Silicon diode. Their advanced recovery characteristics enhance efficiency, reduce EMI, and eliminate the need for snubbers. These diodes are suitable for AC/DC and DC/DC output rectification, output and freewheeling applications, motor drive circuits, and DC-AC inverters.

Product Attributes

Brand: Qspeed
Certifications: RoHS Compliant, Halogen free per IEC 61249-2-21
Material: Lead-free plating and Green mold compound
Origin: www.power.com

Technical Specifications

Model	IF(AVG) per diode	VRRM	QRR (Typ at 125 C)	IRRM (Typ at 125 C)	Softness tb/ta (Typ at 125 C)	Package
LQA40T150C	20 A	150 V	33.6 nC	1.86 A	0.57	TO-220AB
LQA40B150C	20 A	150 V	33.6 nC	1.86 A	0.57	TO-263AB

Symbol	Parameter	Conditions	Rating	Units
VRRM	Peak repetitive reverse voltage	TJ = 25 C	150	V
IF(AVG)	Average forward current	Per Diode, TJ = 150 C, TC = 116 C	20	A
IF(AVG)	Average forward current	Per Device, TJ = 150 C, TC = 116 C	40	A
IFSM	Non-repetitive peak surge current	Per Diode, 60 Hz, cycle	170	A
IFSM	Non-repetitive peak surge current	Per Diode, cycle of t = 28 s Sinusoid, TC = 25 C	350	A
TJ	Operating junction temperature range		55 to 150	C
TSTG	Storage temperature		55 to 150	C
PD	Power dissipation	TC = 25 C	65.8	W

Symbol	Resistance from:	Conditions	Rating	Units
RJA	Junction to ambient	TO-220AB (only)	62	C/W
RJC	Junction to case	Per Diode	1.9	C/W
RJC	Junction to case	Per Device	1.0	C/W

Symbol	Parameter	Conditions	Min	Typ	Max	Units
IR	Reverse current per diode	VR = 150 V, TJ = 25 C	-	-	500	A
IR	Reverse current per diode	VR = 150 V, TJ = 125 C	-	0.44	-	mA
VF	Forward voltage per diode	IF = 20 A, TJ = 25 C	-	1.0	1.2	V
VF	Forward voltage per diode	IF = 20 A, TJ = 150 C	-	0.875	-	V
CJ	Junction capacitance per diode	VR = 10 V, 1 MHz	-	74	-	pF
tRR	Reverse recovery time, per diode	dIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 25 C	-	16.9	-	ns
tRR	Reverse recovery time, per diode	dIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 125 C	-	30.1	-	ns
QRR	Reverse recovery charge, per diode	dIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 25 C	-	10.4	25.7	nC
QRR	Reverse recovery charge, per diode	dIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 125 C	-	33.6	-	nC
IRRM	Maximum reverse recovery current, per diode	dIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 25 C	-	1.03	2.35	A
IRRM	Maximum reverse recovery current, per diode	dIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 125 C	-	1.86	-	A
S	Softness per diode	dIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 25 C	-	0.6	-
S	Softness per diode	dIF/dt = 100 A/s, VR = 100 V, IF = 20 A, TJ = 125 C	-	0.57	-