MMBD4148CC Silicon Epitaxial Planar Diode Small Package High Voltage Switching Diode for Electronics

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Product Description

Product Overview

The MMBD4148 is a high-voltage, small-package silicon epitaxial planar switching diode with small capacitance. It is designed for efficient switching applications.

Product Attributes

Brand: Pingjingsemi
Material: Silicon Epitaxial Planar
Package: SOT-23

Technical Specifications

Parameter	Symbol	MMBD4148	MMBD4148SE	MMBD4148CC	MMBD4148CA	Unit
Maximum Repetitive Reverse Voltage	VRRM	100	100	100	100	V
Reverse Voltage	VR	75	75	75	75	V
Average Rectified Forward Current	IF(AV)	200	200	200	200	mA
DC Forward Current	IFM	600	600	600	600	mA
Repetitive Peak Forward Current	IFRM	700	700	700	700	mA
Non-repetitive Peak Forward Surge Current (t=1s)	IFSM	1	1	1	1	A
Non-repetitive Peak Forward Surge Current (t=1s)	IFSM	4	4	4	4	A
Power Dissipation	PD	350	350	350	350	mW
Junction Temperature	TJ	150	150	150	150	C
Storage Temperature Range	TSTG	-55 to +150	-55 to +150	-55 to +150	-55 to +150	C
Forward Voltage (IF=10 mA)	VF	--0.85	--0.85	--0.85	--0.85	V
Reverse Breakdown Voltage (IR=100 A)	V(BR)R	100	100	100	100	V
Reverse Breakdown Voltage (IR=5 A)	V(BR)R	75	75	75	75	V
Reverse Current (VR=20 V)	IR	--25 nA	--25 nA	--25 nA	--25 nA	nA
Reverse Current (VR=75 V)	IR	--1 A	--1 A	--1 A	--1 A	A
Reverse Current (VR=20 V, TA=150 C)	IR	--50 A	--50 A	--50 A	--50 A	A
Typical Junction Capacitance (VR=0 V, f=1 MHz)	Cj	--4 pF	--4 pF	--4 pF	--4 pF	pF
Maximum Reverse Recovery Time (IF=10 mA, VR=6 V, IRR=1 mA, RL=100 )	Trr	--4 nS	--4 nS	--4 nS	--4 nS	nS