1700V Silicon Carbide FET Qorvo UF3C170400K3S designed for power conversion and inductive load switching
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Product Description
UnitedSiC UF3C170400K3S SiC FET
Product Overview
The UnitedSiC UF3C170400K3S is a 1700V, 410mW Silicon Carbide (SiC) FET device designed for high-efficiency power conversion applications. It features a unique cascode circuit configuration combining a normally-on SiC JFET with a Si MOSFET, resulting in a normally-off SiC FET with standard gate-drive characteristics. This design allows for a direct 'drop-in replacement' for existing Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. The UF3C170400K3S offers ultra-low gate charge, exceptional reverse recovery, and low intrinsic capacitance, making it ideal for switching inductive loads and applications requiring standard gate drive. Its ESD protection (HBM class 2) and high maximum operating temperature of 175C contribute to its robustness and reliability.
Product Attributes
- Brand: UnitedSiC
- Material: Silicon Carbide (SiC)
- Package Type: TO-247-3L
- Certifications: ESD protected, HBM class 2
- Revision: Rev. A
- Date: January 2020
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Units |
|---|---|---|---|---|
| Drain-source voltage | VDS | 1700 | V | |
| Gate-source voltage | VGS | -25 to +25 | V | |
| Pulsed drain current | IDM | TC = 25C | 14 | A |
| Single pulsed avalanche energy | EAS | L=15mH, IAS =1.25A | 11.7 | mJ |
| Power dissipation | Ptot | TC = 25C | 100 | W |
| Maximum junction temperature | TJ,max | 175 | C | |
| Operating and storage temperature | TJ, TSTG | -55 to 175 | C | |
| Max. lead temperature for soldering, 1/8 from case for 5 seconds | TL | 250 | C | |
| Thermal resistance, junction-to-case | RqJC | 1.2 - 1.5 | C/W | |
| Drain-source breakdown voltage | BVDS | VGS=0V, ID=1mA | 1700 | V |
| Total drain leakage current | IDSS | VDS=1700V, VGS=0V, TJ=25C | 1.5 | A |
| Total drain leakage current | IDSS | VDS=1700V, VGS=0V, TJ=175C | 60 | A |
| Total gate leakage current | IGSS | VDS=0V, TJ=25C, VGS=-20V / +20V | 20 | nA |
| Gate threshold voltage | VG(th) | VDS=5V, ID=10mA | 3 - 4.7 | V |
| Gate resistance | RG | f=1MHz, open drain | 4.1 | |
| Drain-source on-resistance | RDS(on) | VGS=12V, ID=5A, TJ=25C | 410 | m |
| Drain-source on-resistance | RDS(on) | VGS=12V, ID=5A, TJ=175C | 515 | m |
| Diode continuous forward current | IS | TC=25C | 7.6 | A |
| Diode pulse current | IS,pulse | TC=25C | 14 | A |
| Forward voltage | VFSD | VGS=0V, IF=2A, TJ=25C | 1.5 - 1.75 | V |
| Forward voltage | VFSD | VGS=0V, IF=2A, TJ=175C | 2.4 | V |
| Reverse recovery charge | Qrr | VR=1200V, IF=5A, VGS=-5V, RG_EXT=10W, di/dt=4000A/ms, TJ=25C | 70 | nC |
| Reverse recovery time | trr | VR=1200V, IF=5A, VGS=-5V, RG_EXT=10W, di/dt=4000A/ms, TJ=25C | 29 | ns |
| Reverse recovery charge | Qrr | VR=1200V, IF=5A, VGS=-5V, RG_EXT=10W, di/dt=4000A/ms, TJ=150C | 67 | nC |
| Reverse recovery time | trr | VR=1200V, IF=5A, VGS=-5V, RG_EXT=10W, di/dt=4000A/ms, TJ=150C | 27 | ns |
| Input capacitance | Ciss | VDS=100V, VGS=0V, f=100kHz | 740 | pF |
| Output capacitance | Coss | VDS=100V, VGS=0V, f=100kHz | 270 | pF |
| Reverse transfer capacitance | Crss | VDS=100V, VGS=0V, f=100kHz | 5.5 | pF |
| Effective output capacitance, energy related | Coss(er) | VDS=0V to 1200V, VGS=0V | 15.5 | pF |
| Effective output capacitance, time related | Coss(tr) | VDS=1200V, VGS=0V | 28 | pF |
| Total gate charge | QG | VDS=1200V, ID=5A, VGS = -5V to 15V | 27.5 | nC |
| Gate-source charge | QGS | VDS=1200V, ID=5A, VGS = -5V to 15V | 10 | nC |
| Gate-drain charge | QGD | VDS=1200V, ID=5A, VGS = -5V to 15V | 6.5 | nC |
| Turn-on delay time | td(on) | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C | 17 | ns |
| Rise time | tr | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C | 13 | ns |
| Turn-off delay time | td(off) | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C | 34 | ns |
| Fall time | tf | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C | 27 | ns |
| Turn-on energy | EON | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C | 189 | mJ |
| Turn-off energy | EOFF | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C | 43 | mJ |
| Total switching energy | ETOTAL | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C | 232 | mJ |
| Turn-on delay time | td(on) | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C | 17 | ns |
| Rise time | tr | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C | 11 | ns |
| Turn-off delay time | td(off) | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C | 35 | ns |
| Fall time | tf | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C | 28 | ns |
| Turn-on energy | EON | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C | 158 | mJ |
| Turn-off energy | EOFF | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C | 50 | mJ |
| Total switching energy | ETOTAL | VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C | 208 | mJ |
| COSS stored energy | EOSS | VDS=0V to 1200V, VGS=0V | 11.2 | mJ |
Typical Applications
- EV charging
- PV inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
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Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina