Fast switching diode R O BAS416 featuring solder plated terminals and 250 milliwatt power dissipation

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Product Description

Product Overview

The BAS416 is a fast switching diode designed for high-speed applications. It offers a fast switching time (TRR

Parameter	Symbol	Unit	Value	Test Conditions
Maximum repetitive peak reverse voltage	VRRM	V	85
Maximum RMS Voltage	VRMS	V	75
Reverse Breakdown voltage	V(BR)R	V	100	@IR=100A
Maximum Average Forward Rectified Current	IF(AV)	mA	200
Non-Repetitive Peak forward surge current	IFSM	A	4.0	@tp=1s
Non-Repetitive Peak forward surge current	IFSM	A	1.0	@tp=1ms
Non-Repetitive Peak forward surge current	IFSM	A	0.5	@tp=1s
Power Dissipation	Pd	mW	250
Storage temperature	Tstg		-55 ~+150
Junction temperature	Tj		150
Typical thermal resistance	RJ-A	/W	450
Maximum instantaneous forward voltage	VF	V	0.90	IF=1.0mA (Typical)
Maximum instantaneous forward voltage	VF	V	1.0	IF=10mA (Typical)
Maximum instantaneous forward voltage	VF	V	1.1	IF=50mA (Typical)
Maximum instantaneous forward voltage	VF	V	1.25	IF=150mA (Typical)
Reverse Leakage Current	IR	nA	5.0	VR=75V (Typical)
Reverse Leakage Current	IR	A	80	VR=75V;Tj=150 (Typical)
Total capacitance	CT	pF	2.0	VR=0V,f=1MHz (Typical)
Maximum reverse recovery time	Trr	ns	3.0	IF=IR=10mA,Irr=0.1IR, RL=100 (Max)
Maximum reverse recovery time	Trr	ns	0.8	IF=IR=10mA,Irr=0.1IR, RL=100 (Type)