Electronic Component PJSEMI PJM60H12MNSA N Channel MOSFET Featuring 600V Drain Source Voltage Rating
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Product Description
Product Overview
The PJM60H12MNSA is an N-Channel Depletion Mode MOSFET designed for various electronic applications. It offers improved ESD capability, RoHS and Reach compliance, and is halogen and antimony free. This MOSFET is characterized by its high breakdown voltage (600V) and low on-resistance.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 0.03 | A | |||
| Drain Current-Pulsed | IDM | 0.12 | A | |||
| Maximum Power Dissipation | PD | 0.5 | W | |||
| Gate Source ESD (HBM-C=100pF, R=1.5kΩ) | VESD(G-S) | 300 | V | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Electrical Characteristics (Ta=25℃ unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=-5V,ID=250μA | 600 | -- | -- | V |
| Gate-Body Leakage Current | ID(off) | VGS=-5V,ID=250μA | 0.1 | μA | ||
| Gate-Body Leakage Current | ID(off) | VDS=480V, VGS=-5V, TA=125℃ | 10 | μA | ||
| Gate Leakage Current | IGSS | VGS=±10V | ±200 | nA | ||
| Gate-to-Source Cut-off Voltage | VGS(off) | VDS=3V,ID=8μA | -2.7 | -1.8 | -1 | V |
| On-State Drain Current | IDSS | VGS=0V, VDS=25V | 12 | -- | mA | |
| Drain-Source On-Resistance | RDS(on) | VGS=0V, ID=3mA | 350 | 700 | Ω | |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=16mA | 400 | 800 | Ω | |
| Forward Transconductance | gFS | VDS=50V,ID=0.01A | 8 | 17 | -- | mS |
| Input Capacitance | Ciss | VDS=25V,VGS=-5V,f=1MHz | 50 | -- | pF | |
| Output Capacitance | Coss | 4.53 | -- | pF | ||
| Reverse Transfer Capacitance | Crss | 1.08 | -- | pF | ||
| Total Gate Charge | Qg | VDD=400V,ID=0.01A, VGS=-5V~5V | 1.14 | -- | nC | |
| Gate-Source Charge | Qgs | 0.5 | -- | nC | ||
| Gate-Drain Charge | Qgd | 0.37 | -- | nC | ||
| Turn-on Delay Time | td(on) | VDD=300V, ID=0.01A VGS=-5V~7V,RG=6Ω | 9.9 | -- | nS | |
| Turn-on Rise Time | tr | 55.8 | -- | nS | ||
| Turn-off Delay Time | td(off) | 56.4 | -- | nS | ||
| Turn-off Fall Time | tf | 136 | -- | nS | ||
| Diode Forward Voltage | VSD | VGS=-5V,IF=16mA | -- | 1.2 | V | |
| Diode Forward Current | IS | -- | 0.025 | A | ||
| Gate-Source Breakdown Voltage | VGSO | IGS=±1mA (Open Drain) | 0.75 | 1.2 | V | |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina