Load Switching and Power Management Using PJSEMI PJM2303PSA P Channel Enhancement Mode Power MOSFET
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The PJM2303PSA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for applications requiring efficient load switching, PWM control, and power management. This RoHS and Reach compliant component is halogen and antimony free, offering a moisture sensitivity level of 1.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 2.5 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 0.9 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 139 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3,VDS=VGS,ID=-250μA | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-10V,ID=-2A | -- | 66 | 78 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-4.5V,ID=-1.5A | -- | 89 | 105 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=-5V,ID=-1A | -- | 3.9 | -- | S |
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | -- | 372 | -- | pF |
| Output Capacitance | Coss | -- | 50 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 41 | -- | pF | |
| Gate Resistance | RG | VDS=0V,VGS=0V,f=1MHz | -- | 11 | -- | Ω |
| Total Gate Charge | Qg | VDS=-15V,ID=-3A, VGS=-10V | -- | 7 | -- | nC |
| Gate-Source Charge | Qgs | -- | 2 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 1 | -- | nC | |
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-3A, VGS=-10V,RGEN=3Ω | -- | 5 | -- | nS |
| Turn-on Rise Time | tr | -- | 23 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 21 | -- | nS | |
| Turn-off Fall Time | tf | -- | 30 | -- | nS | |
| Diode Forward Voltage | -VSD | Note3,VGS=0V,IS=-2.5A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 2.5 | A |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina