N Channel MOSFET PJSEMI PJM2312NSC Featuring Trench Technology and Low On Resistance for Load Switch
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM2312NSC is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, and free from Halogen and Antimony. Designed for load switch and PWM applications, this MOSFET offers a VDS of 20V and a continuous ID of 5A, with low on-resistance (RDS(on)
Product Attributes
- Brand: Pingjing Semiconductor
- Origin: China (implied by domain)
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Drain Current-Continuous | ID | 5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.25 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Ambient | RJA | Note2 | 100 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=10V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note2, VDS=VGS,ID=250A | 0.5 | 0.7 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=4.5V,ID=4.5A | -- | 18 | 28 | m |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=2.5V,ID=4A | -- | 22 | 35 | m |
| Forward Transconductance | gFS | Note2, VDS=15V,ID=5A | -- | 25 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=8V,VGS=0V,f=1MHz | -- | 500 | -- | pF |
| Output Capacitance | Coss | -- | 295 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 96 | -- | pF | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=10V,ID=3A, VGS=4.5V | -- | 10 | -- | nC |
| Gate-Source Charge | Qgs | -- | 2.3 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 2.9 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=1A, VGS=4.5V, RGEN=6 | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | -- | 30 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 35 | -- | nS | |
| Turn-off Fall Time | tf | -- | 10 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=5A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 5 | A |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina