High Current Capacity MOSFET PJSEMI PJMG10H45NTE Designed for Power Switching and Frequency Circuits
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Product Description
Product Overview
The PJMG10H45NTE is an N-Channel Enhancement Mode Power MOSFET featuring advanced Split Gate Trench Technology. It is designed for power switching applications, including hard switched and high frequency circuits, as well as uninterruptible power supplies. This MOSFET is 100% avalanche tested and RoHS compliant, offering reliable performance with low on-resistance characteristics.
Product Attributes
- Brand: Pingjing Semiconductor
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 45 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 180 | A | ||
| Maximum Power Dissipation | PD | 72 | W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 76.5 | mJ | ||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250A | 1.0 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=20A | -- | 14 | 17 | m |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=10A | -- | 18 | 22 | m |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=3A | -- | 11 | -- | S |
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHz | -- | 1187 | -- | pF |
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHz | -- | 579 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHz | -- | 13 | -- | pF |
| Gate Resistance | RG | VDS=0V,VGS=0V,f=1MHz | -- | 1.7 | -- | |
| Total Gate Charge | Qg | VDS=50V, ID=25A, VGS=10V | -- | 16 | -- | nC |
| Gate-Source Charge | Qgs | VDS=50V, ID=25A, VGS=10V | -- | 5.6 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=50V, ID=25A, VGS=10V | -- | 2.4 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=50V, ID=25A, VGS=10V, RGEN=2.2 | -- | 39.2 | -- | nS |
| Turn-on Rise Time | tr | VDD=50V, ID=25A, VGS=10V, RGEN=2.2 | -- | 11 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=50V, ID=25A, VGS=10V, RGEN=2.2 | -- | 53.2 | -- | nS |
| Turn-off Fall Time | tf | VDD=50V, ID=25A, VGS=10V, RGEN=2.2 | -- | 15.8 | -- | nS |
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=20A | -- | -- | 1.3 | V |
| Diode Forward Current | IS | -- | -- | 45 | A | |
| Thermal Characteristics | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 1.74 | C/W | |||
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