Dual N Channel MOSFET PJSEMI PJM05DN20DFA Featuring Loss and in Power Management Circuits
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Product Description
Product Overview
The PJM05DN20DFA is a Dual N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low RDS(ON), making it suitable for applications requiring high performance and reduced power loss. With a VDS of 20V and ID of 5.5A, it offers a low RDS(on) of less than 28m at VGS=4.5V. This MOSFET is ideal for DC/DC converters and load switches in portable devices.
Product Attributes
- Brand: Pingjing Semiconductor
- Package Type: DFN2x2A-6L
- Marking Code: 05DN20
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | ID | 5.5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 18 | A | ||
| Maximum Power Dissipation | PD | 1 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Note2 | 125 | /W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250A | 0.45 | 1 | V | |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V, ID=4A | 28 | m | ||
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=2.5V, ID=3A | 35 | m | ||
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=1.8V, ID=2A | 55 | m | ||
| Forward Transconductance | gFS | Note3, VDS=5V,ID=3A | 8 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | 300 | pF | ||
| Output Capacitance | Coss | 120 | pF | |||
| Reverse Transfer Capacitance | Crss | 80 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, VGS=4.5V ID =3A, RGEN=6 | 10 | nS | ||
| Turn-on Rise Time | tr | 50 | nS | |||
| Turn-off Delay Time | td(off) | 17 | nS | |||
| Turn-off Fall Time | tf | 10 | nS | |||
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V ID =4A | 4.0 | nC | ||
| Gate-Source Charge | Qgs | 0.65 | nC | |||
| Gate-Drain Charge | Qg d | 1.2 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=5.5A | 1.2 | V | ||
| Diode Forward Current | IS | Note2 | 5.5 | A | ||
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