Complementary N Channel and P Channel Power MOSFET Model PJSEMI PJM06C60PA Featuring Low On Resistance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM06C60PA is a complementary N-Channel and P-Channel Power MOSFET designed for high power and current handling capabilities. It features an advanced trench technology for low on-resistance and fast switching speeds, making it suitable for various electronic applications. This lead-free product is available in a surface mount SOP-8 package.
Product Attributes
- Brand: PingJingSemi
- Model: PJM06C60PA
- Material: Lead Free Product
- Package: SOP-8
Technical Specifications
| Parameter | Symbol | N-Channel Test Condition | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | P-Channel Test Condition | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit |
| Drain-Source Voltage | VDS | 60 | V | -60 | V | ||||||
| Gate-Source Voltage | VGS | ±20 | V | ±20 | V | ||||||
| Drain Current-Continuous | ID | 6 | A | -6 | A | ||||||
| Drain Current-Pulsed | IDM | Note1 | 30 | A | Note1 | -25 | A | ||||
| Maximum Power Dissipation | PD | 2 | W | 2 | W | ||||||
| Single pulse avalanche energy | EAS | Note4 | 16 | mJ | Note4 | 30 | mJ | ||||
| Junction Temperature | TJ | 150 | °C | 150 | °C | ||||||
| Storage Temperature Range | TSTG | -55 | +150 | °C | -55 | +150 | °C | ||||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 62.5 | °C/W | Note2 | 62.5 | °C/W | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 60 | V | VGS=0V,ID=-250μA | 60 | V | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | μA | VDS=-60V,VGS=0V | 1 | μA | ||||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | VGS=±20V,VDS=0V | ±100 | nA | ||||
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 1 | 1.6 | 2.5 | V | Note3,VDS=VGS,ID=-250μA | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=8A | 39 | 50 | mΩ | Note3,VGS=-10V,ID=-6A | 52 | 70 | mΩ | ||
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=6A | 46 | 70 | mΩ | Note3,VGS=-4.5V,ID=-6A | 60 | 90 | mΩ | ||
| Forward Transconductance | gFS | Note3,VDS=5V,ID=1A | 4.2 | S | Note3,VDS=-5V,ID=-1A | 5.5 | S | ||||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHz | 830 | pF | VDS=-30V,VGS=0V,f=1MHz | 1070 | pF | ||||
| Output Capacitance | Coss | 44.6 | pF | 69 | pF | ||||||
| Reverse Transfer Capacitance | Crss | 36 | pF | 59 | pF | ||||||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f =1MHz | 0.65 | Ω | VDS=0V,VGS=0V,f =1MHz | 3.7 | Ω | ||||
| Turn-on Delay Time | td(on) | VDD=30V,RL=2.5Ω,VGS=10V,RGEN=3Ω | 5 | nS | VDD=-30V, RL=3.75Ω,VGS=-10V, RGEN=3Ω | 8 | nS | ||||
| Turn-on Rise Time | tr | 2.6 | nS | 4 | nS | ||||||
| Turn-off Delay Time | td(off) | 16.1 | nS | 32 | nS | ||||||
| Turn-off Fall Time | tf | 2.3 | nS | 7 | nS | ||||||
| Total Gate Charge | Qg | VDS=30V,ID=6A, VGS=10V | 14 | nC | VDS=-30V, ID=-8A, VGS=-10V | 23.4 | nC | ||||
| Gate-Source Charge | Qgs | 2.9 | nC | 4.1 | nC | ||||||
| Gate-Drain Charge | Qg d | 5.2 | nC | 4.8 | nC | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=6A | 1.2 | V | Note3,VGS=0V,IS=-6A | 1.2 | V | ||||
| Diode Forward Current | IS | 6 | A | -6 | A |
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