N Channel Enhancement Mode MOSFET PJSEMI PJM2306NSA designed for load switching and power management
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM2306NSA is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications like PWM, load switching, and power management. The device comes in a compact SOT-23 package.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 3.5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 0.7 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 179 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250A | 1 | 1.5 | 3 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=3.5A | -- | 38 | 47 | m |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=2.8A | -- | 52 | 65 | m |
| Forward Transconductance | gFS | Note3,VDS=4.5V,ID=2.5A | -- | 7 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 230 | -- | pF |
| Output Capacitance | Coss | -- | 40 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 17 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=3.5A,VGS=4.5V,RGEN=6 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | -- | 50 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 10 | -- | nS | |
| Turn-off Fall Time | tf | -- | 20 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=15V,ID=3.5A,VGS=10V | -- | 4 | -- | nC |
| Gate-Source Charge | Qgs | -- | 0.75 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 0.65 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=3.5A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 3.5 | A |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina