N Channel MOSFET PJSEMI PJM20H02ANSC with 200V Drain Source Voltage and Low Gate Body Leakage Current
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Product Description
Product Overview
The PJM20H02ANSC is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for synchronous buck converter applications and offers advantages such as being Halogen and Antimony Free. This MOSFET is rated for VDS= 200V and ID= 2A, with a low RDS(on) of
Product Attributes
- Brand: PingJingSemi (implied by www.pingjingsemi.com)
- Certifications: Halogen and Antimony Free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 200 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.0 | -- | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=0.5A | -- | -- | 1.9 | |
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 900 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | -- | 130 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | -- | 4.6 | -- | pF |
| Total Gate Charge | Qg | VDS=160V,ID=1.5A, VGS=10V | -- | 15 | -- | nC |
| Gate-Source Charge | Qgs | VDS=160V,ID=1.5A, VGS=10V | -- | 3 | -- | nC |
| Gate-Drain Charge | Qg | VDS=160V,ID=1.5A, VGS=10V | -- | 5.2 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=100V,ID=1.5A, VGS=10V,RGEN=3 | -- | 25 | -- | nS |
| Turn-on Rise Time | tr | VDD=100V,ID=1.5A, VGS=10V,RGEN=3 | -- | 36 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=100V,ID=1.5A, VGS=10V,RGEN=3 | -- | 48 | -- | nS |
| Turn-off Fall Time | tf | VDD=100V,ID=1.5A, VGS=10V,RGEN=3 | -- | 14 | -- | nS |
| Diode Forward Voltage | VSD | VGS=0V,IS=2A | -- | -- | 1.0 | V |
| Diode Forward Current | IS | VGS=0V,IS=2A | -- | -- | 2 | A |
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