N Channel Enhancement Mode Power MOSFET PJSEMI PJM65H02CNTE for Load Switch and PWM Applications
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The PJM65H02CNTE is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is designed for load switch and PWM applications, offering RoHS and Reach compliance, and is halogen and antimony free. This MOSFET is suitable for power management solutions.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Drain Current-Continuous | ID | TC = 25C | 2 | A | ||
| Drain Current-Pulsed | IDM | Note1 | 8 | A | ||
| Single Pulse Avalanche Energy | EAS | Note2 | 31 | mJ | ||
| Maximum Power Dissipation | PD | TC = 25C | 35 | W | ||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 3.6 | C/W | |||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 650 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=30V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2.0 | -- | 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=1A | -- | 4.4 | 5.3 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 296 | -- | pF |
| Output Capacitance | Coss | -- | 34 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 7 | -- | pF | |
| Total Gate Charge | Qg | VDS=520V, ID=2A, VGS=10V | -- | 9.5 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1.5 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 4.9 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=325V, ID=2A, RGEN=10 | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | -- | 13 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 29 | -- | nS | |
| Turn-off Fall Time | tf | -- | 12 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=2A | -- | -- | 1.4 | V |
| Diode Forward Current | IS | -- | -- | 2 | A | |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina