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Dual P Channel Enhancement Mode MOSFET PJSEMI PJM05DP20DFA Ideal for Load Switching and PWM Circuits

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Product Description

Product Overview

The PJM05DP20DFA is a Dual P-Channel Enhancement Mode Power MOSFET designed for high-performance applications. It features low gate charge and a high-density cell design for ultra-low RDS(on), making it suitable for PWM applications, load switching, and power management. This device offers VDS of -20V and ID of -4.5A with RDS(on) as low as 45m at VGS = -4.5V.

Product Attributes

  • Brand: PingJingSemi
  • Model: PJM05DP20DFA
  • Package: DFN2x2A-6L
  • Marking Code: 05DP20
  • Revision: 1.0
  • Date: May-2022

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Unit
Absolute Maximum Ratings-VDS20V
VGS12V
-ID4.5A
PD1.4W
TJ150C
TSTG-55+150C
Electrical Characteristics-V(BR)DSSVGS=0V,ID=-250A20----V
-IDSSVDS=-20V,VGS=0V----1A
IGSSVGS=12V,VDS=0V----100nA
-VGS(th)VDS=VGS,ID=-250A0.50.70.9V
RDS(on)VGS=-4.5V,ID=-3A--45--m
RDS(on)VGS=-2.5V,ID=-2A--70--m
gFSVDS=-5V,ID=-4.1A--6--S
-VSDVGS=0V,IS=-4.1A----1.2V
-IS----4.5A
Dynamic CharacteristicsCissVDS=-4V,VGS=0V,f=1MHz--740--pF
Coss--290--pF
Crss--190--pF
Switching Characteristicstd(on)VDD=-4V,RL=1.2,VGS=-4.5V,RGEN=1--12--nS
tr--35--nS
td(off)--30--nS
tf--10--nS
Gate ChargeQgVDS=-4V,ID=-4.1A, VGS=-4.5V--7.8--nC
Qgs--1.2--nC
Qgd--1.6--nC
Thermal CharacteristicsRJANote189C/W

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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