P J S E M I P J M 0 5 P 3 0 P A P Channel Power MOSFET Designed for Power Management and Switching
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Product Description
Product Overview
The PJM05P30PA is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low RDS(on) through advanced trench technology. It is suitable for PWM applications, load switching, and power management scenarios, featuring a VDS of -30V and an ID of -5.1A with RDS(on)
Product Attributes
- Brand: PJM (implied from product code)
- Origin: www.pingjingsemi.com
- Revision: 3.0
- Date: Oct-2022
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | -VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 5.1 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 20.4 | A | ||
| Maximum Power Dissipation | PD | 2.15 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | Note2 | 58 | °C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250µA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | 1 | µA | |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | ±100 | nA | |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250µA | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-10V,ID=-5.1A | 43 | 55 | mΩ | |
| Note3, VGS=-4.5V,ID=-4.2A | 65 | 90 | mΩ | |||
| Forward Transconductance | gFS | Note3, VDS=-5V,ID=-4A | 7.5 | -- | S | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 596 | -- | pF | |
| Output Capacitance | Coss | 95 | -- | pF | ||
| Reverse Transfer Capacitance | Crss | 68 | -- | pF | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V,VGS=-10V ID=-1A, RGEN=2.5Ω | 14 | -- | nS | |
| Turn-on Rise Time | tr | 61 | -- | nS | ||
| Turn-off Delay Time | td(off) | 19 | -- | nS | ||
| Turn-off Fall Time | tf | 10 | -- | nS | ||
| Total Gate Charge | ||||||
| Gate Charge | Qg | VDS=-15V,VGS=-10V ID=-5.1A | 6.8 | -- | nC | |
| Gate-Source Charge | Qgs | 1 | -- | nC | ||
| Gate-Drain Charge | Qg d | 1.4 | -- | nC | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3, VGS=0V,IS=-5.1A | 0.8 | 1.2 | V | |
| Diode Forward Current | -IS | Note2 | -- | 5.1 | A | |
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