300 Volt 12 Amp Q Series Diode Power Integrations LQA12B300C Common Cathode Rectifier
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Product Description
Product Overview
The LQA12T300C and LQA12B300C are Qspeed Family 300 V, 12 A Q-Series Common-Cathode Diodes. These diodes offer the lowest QRR of any 300 V Silicon diode, leading to increased efficiency, reduced EMI, and elimination of snubbers. They are suitable for AC/DC and DC/DC output rectification, output and freewheeling diodes, motor drive circuits, and DC-AC inverters. Key features include low QRR, low IRRM, low tRR, high dIF/dt capability, and soft recovery, enabling increased efficiency, elimination of snubber circuits, reduced EMI filter size and count, and extremely fast switching.
Product Attributes
- Brand: Qspeed
- Family: Q-Series
- Certifications: RoHS Compliant, Halogen free per IEC 61249-2-21
- Package Material: Lead-free plating and Green mold compound
Technical Specifications
| Part Number | IF(AVG) per diode | VRRM | QRR (Typ at 125 C) | IRRM (Typ at 125 C) | Softness tb/ta (Typ at 125 C) | Package |
| LQA12T300C | 6 A | 300 V | 27 nC | 1.87 A | 0.7 | TO-220AB |
| LQA12B300C | 6 A | 300 V | 27 nC | 1.87 A | 0.7 | TO-263AB |
| Symbol | Parameter | Conditions | Rating | Units |
| Absolute Maximum Ratings | ||||
| VRRM | Peak repetitive reverse voltage | 300 | V | |
| IF(AVG) | Average forward current | Per Diode, TJ = 150 C, TC = 117C | 6 | A |
| IF(AVG) | Average forward current | Per Device, TJ = 150 C, TC = 117C | 12 | A |
| IFSM | Non-repetitive peak surge current | Per Diode, 60 Hz, cycle | 37 | A |
| IFSM | Non-repetitive peak surge current | Per Diode, cycle of t = 28 s Sinusoid, TC = 25 C | 350 | A |
| TJ | Maximum junction temperature | 150 | C | |
| TSTG | Storage temperature | 55 to 150 | C | |
| Lead soldering temperature | Leads at 1.6mm from case, 10 sec | 300 | C | |
| PD | Power dissipation | TC = 25 C | 33.8 | W |
| Thermal Resistance | ||||
| RJA | Junction to ambient | TO-220AB (only) | 62 | C/W |
| RJC | Junction to case | Per Diode | 3.7 | C/W |
| RJC | Junction to case | Per Device | 1.9 | C/W |
| Electrical Specifications at TJ= 25 C (unless otherwise specified) | ||||
| DC Characteristics per diode | ||||
| IR | Reverse current per diode | VR = 300 V, TJ = 25 C | 25 | A |
| IR | Reverse current per diode | VR = 300 V, TJ = 125 C | 0.24 | mA |
| VF | Forward voltage per diode | IF = 6 A, TJ = 25 C | 1.6 - 1.9 | V |
| VF | Forward voltage per diode | IF = 6 A, TJ = 150 C | 1.34 | V |
| CJ | Junction capacitance per diode | VR = 10 V, 1 MHz | 19 | pF |
| Dynamic Characteristics per diode | ||||
| tRR | Reverse recovery time, per diode | dIF/dt =200 A/s, VR=200, IF=6 A, TJ=25 C | 11.5 | ns |
| tRR | Reverse recovery time, per diode | dIF/dt =200 A/s, VR=200, IF=6 A, TJ=125 C | 21 | ns |
| QRR | Reverse recovery charge, per diode | dIF/dt =200 A/s, VR=200, IF=6 A, TJ=25 C | 8.5 - 13 | nC |
| QRR | Reverse recovery charge, per diode | dIF/dt =200 A/s, VR=200, IF=6 A, TJ =125 C | 27 | nC |
| IRRM | Maximum reverse recovery current, per diode | dIF/dt =200 A/s, VR=200, IF=6 A, TJ =25 C | 1.15 - 1.6 | A |
| IRRM | Maximum reverse recovery current, per diode | dIF/dt =200 A/s, VR=200, IF=6 A, TJ=125 C | 1.87 | A |
| S | Softness per diode | dIF/dt =200 A/s, VR=200, IF=6 A, TJ =25 C | 0.7 | |
| S | Softness per diode | dIF/dt =200 A/s, VR=200, IF=6 A, TJ=125 C | 0.7 | |
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