Silicon Carbide FET UJ4C075033K3S 750V 33mW TO2473L Package Suitable for EV Charging and Motor Drives
Product Overview
The UJ4C075033K3S is a 750V, 33mW G4 Silicon Carbide (SiC) FET, featuring a unique cascode circuit configuration that combines a normally-on SiC JFET with a Si MOSFET to create a normally-off device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-247-3L package, it boasts ultra-low gate charge (QG = 37.8nC), exceptional reverse recovery characteristics, and low body diode forward voltage (VFSD). Its low intrinsic capacitance and threshold voltage (VG(th) = 4.8V typ.) facilitate standard 0 to 15V drive. Ideal for applications such as EV charging, switch mode power supplies, PV inverters, power factor correction modules, motor drives, and induction heating, this device excels in switching inductive loads and any application requiring standard gate drive.
Product Attributes
- Brand: UnitedSiC
- Material: Silicon Carbide (SiC) FET
- Package Type: TO-247-3L
- ESD Protection: HBM class 2 and CDM class C3
Technical Specifications
| Parameter | Test Conditions | Value | Units |
|---|---|---|---|
| Part Number | UJ4C075033K3S | ||
| Drain-source voltage (VDS) | 750 | V | |
| On-resistance (RDS(on)) | VGS=12V, ID=30A, TJ=25C | 33 | mW (typ) |
| On-resistance (RDS(on)) | VGS=12V, ID=30A, TJ=175C | 41 | mW (typ) |
| Gate threshold voltage (VG(th)) | VDS=5V, ID=10mA | 4.8 | V (typ) |
| Total gate charge (QG) | VDS=400V, ID=30A, VGS = 0V to 15V | 37.8 | nC (typ) |
| Reverse recovery charge (Qrr) | VR=400V, IS=30A, VGS=0V, RG_EXT=5W, di/dt=1600A/ms, TJ=25C | 71 | nC (typ) |
| Reverse recovery charge (Qrr) | VR=400V, IS=30A, VGS=0V, RG_EXT=5W, di/dt=1600A/ms, TJ=150C | 79 | nC (typ) |
| Low body diode VFSD | VGS=0V, IS=15A, TJ=25C | 1.26 | V (typ) |
| Maximum junction temperature (TJ,max) | 175 | C | |
| Continuous drain current (ID) | TC = 25C | 47 | A |
| Pulsed drain current (IDM) | TC = 25C | 140 | A |
| Power dissipation (Ptot) | TC = 25C | 242 | W |
| Thermal resistance, junction-to-case (RJC) | 0.48 - 0.62 | C/W | |
| dv/dt ruggedness | VDS [ 500V, TC=100C | 200 | V/ns |
| Single pulsed avalanche energy (EAS) | L=15mH, IAS =2.4A | 43 | mJ |
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