ROHM DTC114TUAT106 digital transistor NPN type featuring built in bias resistors for simplified circuit design

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Product Description

Product Overview

The DTC114T series is a line of NPN digital transistors featuring built-in bias resistors, simplifying circuit design by eliminating the need for external input resistors. These transistors are ideal for inverter, interface, and driver applications, offering easy circuit design by only requiring the setting of on/off conditions. Complementary PNP types are available in the DTA114T series.

Product Attributes

Brand: ROHM

Technical Specifications

Model	Package	Package Size	VCEO (V)	IC (mA)	R1 (k)	Power Dissipation (mW)	Marking
DTC114TM	SOT-723	1212	50	100	10	150*1	04
DTC114TEB	SOT-416FL	1616	50	100	10	150*1	04
DTC114TE	SOT-416	1616	50	100	10	150*1	04
DTC114TUB	SOT-323FL	2021	50	100	10	200*1	04
DTC114TUA	SOT-323	2021	50	100	10	200*1	04
DTC114TKA	SOT-346	2928	50	100	10	200*1	04

*1 Each terminal mounted on a reference land.

Electrical Characteristics (Ta = 25C)

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Collector-base breakdown voltage	BVCBO	IC = 50A	50	-	-	V
Collector-emitter breakdown voltage	BVCEO	IC = 1mA	50	-	-	V
Emitter-base breakdown voltage	BVEBO	IE = 50A	5	-	-	V
Collector cut-off current	ICBO	VCB = 50V	-	-	500	nA
Emitter cut-off current	IEBO	VEB = 4V	-	-	500	nA
Collector-emitter saturation voltage	VCE(sat)	IC = 10mA, IB = 1mA	-	-	300	mV
DC current gain	hFE	VCE = 5V, IC = 1mA	100	250	600	-
Input resistance	R1	-	7	10	13	k
Transition frequency	fT*2	VCE = 10V, IE = -5mA, f = 100MHz	-	250	-	MHz

*2 Characteristics of built-in transistor

Absolute Maximum Ratings (Ta = 25C)

Parameter	Symbol	Value	Unit
Collector-base voltage	VCBO	50	V
Collector-emitter voltage	VCEO	50	V
Emitter-base voltage	VEBO	5	V
Collector current	IC	100	mA
Junction temperature	Tj	150
Range of storage temperature	Tstg	-55 to +150