650V 35 Milliohm Gallium Nitride FET Device RENESAS TP65H035G4WS Featuring Gen IV SuperGaN Technology
Product Description
The TP65H035G4WS is a 650V, 35 m gallium nitride (GaN) FET utilizing Renesass Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, delivering superior reliability and performance. The Gen IV SuperGaN platform leverages advanced epitaxy and patented design technologies to simplify manufacturing while enhancing efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and reverse recovery charge. It enables AC-DC bridgeless totem-pole PFC designs, leading to increased power density, reduced system size and weight, and lower overall system cost. It also achieves increased efficiency in both hard- and soft-switched circuits and is easy to drive with commonly-used gate drivers. The GSD pin layout aids in high-speed design.
Product Attributes
- Brand: Renesas
- Technology: SuperGaN Gen IV
- Material: Gallium Nitride (GaN) HEMT with Silicon MOSFET
- Qualification: JEDEC qualified
Technical Specifications
| Parameter | Symbol | Limit/Typical Value | Unit | Conditions |
| Drain to source voltage | VDSS | 650 | V | TJ = -55C to 150C |
| Transient drain to source voltage, non-repetitive | VDSS(TR) | 800 | V | spike duration < 30ms |
| Transient drain to source voltage, repetitive | VDSS(TR) | 750 | V | spike duration <5s |
| Gate to source voltage | VGSS | 20 | V | |
| Maximum power dissipation | PD | 156 | W | @TC=25C |
| Continuous drain current | ID | 46 | A | @TC=25C (c) |
| Continuous drain current | ID | 29 | A | @TC=100C (c) |
| Pulsed drain current | IDM | 240 | A | pulse width: 10s |
| Operating temperature | TC | -55 to +150 | C | Case |
| Junction temperature | TJ | -55 to +150 | C | |
| Storage temperature | TS | -55 to +150 | C | |
| Soldering peak temperature | TSOLD | 260 | C | For 10 sec., 1.6mm from the case |
| Junction-to-case thermal resistance | RJC | 0.8 | C/W | Typical |
| Junction-to-ambient thermal resistance | RJA | 40 | C/W | Typical |
| Drain-source on-resistance | RDS(on)eff | 35 | m | max*, VGS=10V, ID=30A |
| Drain-source on-resistance | RDS(on)eff | 72 | m | max*, VGS=10V, ID=30A, TJ=150C |
| Output capacitance | QOSS | 150 | nC | typ |
| Total gate charge | QG | 22 | nC | typ |
| Reverse recovery charge | QRR | 0 | nC |
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