Compact dual transistor device ROHM UMF28NTR ideal for power management and mounting cost reduction

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Product Description

Product Overview

The UMF28N is a power management device featuring dual transistors in a single package, designed to reduce mounting cost and area. It is suitable for power management applications.

Product Attributes

Brand: ROHM
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Part	Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Tr1	Collector-base voltage	VCBO				-60	V
	Collector-emitter voltage	VCEO				-50	V
	Emitter-base voltage	VEBO					-6	V
	Collector current	IC					-150	mA
	Collector-base breakdown voltage	BVCBO	IC = -50A		-60			V
	Collector-emitter breakdown voltage	BVCEO	IC = -1mA		-50			V
	Emitter-base breakdown voltage	BVEBO	IE = -50A		-6			V
	Collector cut-off current	ICBO	VCB = -60V				-100	nA
	Emitter cut-off current	IEBO	VEB = -6V				-100	nA
	Collector-emitter saturation voltage	VCE(sat)	IC = -50mA, IB = -5mA				-500	mV
	DC current gain	hFE	VCE = -6V, IC = -1mA		180		390	-
DTr2	Supply voltage	VCC				50	V
	Input voltage	VIN			-10		40	V
	Output current	IO					50	mA
	Collector current (MAX)*2	IC(MAX)					100	mA
	Input voltage (off)	VI(off)	VCC = 5V, IO = 100A				0.4	V
	Input voltage (on)	VI(on)	VO = 0.3V, IO = 2mA	2.5			V
	Output voltage (on)	VO(on)	IO / II = 10mA / 0.5mA		100	300	mV
	DC current gain	GI	VO = 5V, IO = 5mA	68			-
Both	Power dissipation	PD13				150	mW
Both	Junction temperature	Tj				150