Low frequency amplification and high speed switching transistor ROHM 2SAR554P5T100 in SOT 89 package

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Product Description

Product Overview

The 2SAR554P5 is a middle power transistor designed for low frequency amplification and high-speed switching applications. It features low saturation voltage, typically VCE(sat)=-400mV (Max.) at IC/IB=-500mA/-25mA, and high-speed switching capabilities. The transistor is available in a SOT-89 (MPT3) package.

Product Attributes

Brand: ROHM
Package: SOT-89 (MPT3)
Marking: MH

Technical Specifications

Parameter	Symbol	Conditions	Values	Unit
Collector-base breakdown voltage	BVCBO	IC = -100A	-80	V
Collector-emitter breakdown voltage	BVCEO	IC = -1mA	-80	V
Emitter-base breakdown voltage	BVEBO	IE = -100A	-6	V
Collector current	IC		-1.5	A
Collector current (Pulse)	ICP*1	Pw=10ms, Single Pulse	-3	A
Power dissipation	PD*2	Each terminal mounted on a reference land.	0.5	W
Power dissipation	PD*3	Mounted on a ceramic board.(40400.7mm)	2.0	W
Junction temperature	Tj		150
Range of storage temperature	Tstg		-55 to +150
Collector cut-off current	ICBO	VCB = -80V	-1.0	A
Emitter cut-off current	IEBO	VEB = -4V	-1.0	A
Collector-emitter saturation voltage	VCE(sat)	IC = -500mA, IB = -25mA	-400	mV
DC current gain	hFE	VCE = -3V, IC = -100mA	120 - 390	-
Transition frequency	fT	VCE = -10V, IE = 200mA, f = 100MHz	340	MHz
Output capacitance	Cob	VCB = -10V, IE = 0A, f = 1MHz	15	pF
Turn-On time	ton	IC = -700mA, IB1 = -70mA, IB2 = 70mA, VCC -10V, RL = 15	50	ns
Storage time	tstg		300	ns
Fall time	tf		50	ns