Fast switching ROHM 2SC5103TLQ transistor designed for loss and wide safe operating area in electronics

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Product Description

Product Overview

The 2SC5103 is a high-speed switching transistor designed for efficient power management. It features low VCE(sat) for reduced power loss and fast switching times (tf: Typ. 0.1 s), making it ideal for applications requiring rapid on/off cycles. The wide safe operating area (SOA) ensures reliability under various operating conditions. This transistor complements the 2SA1952.

Product Attributes

Brand: ROHM
Package: CPT3 (EIAJ: SC-63)

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Collector-base breakdown voltage	BVCBO	100	-	-	V	IC = 50A
Collector-emitter breakdown voltage	BVECEO	60	-	-	V	IC = 1mA
Emitter-base breakdown voltage	BVEBO	5	-	-	V	IE = 50A
Collector cutoff current	ICBO	-	-	10	A	VCB = 100V
Emitter cutoff current	IEBO	-	-	10	A	VEB = 5V
Collector-emitter saturation voltage	VCE(sat)	-	0.15	-	V	IC / IB = 3A / 0.15A
Collector-emitter saturation voltage	VCE(sat)	-	0.5	-	V	IC / IB = 4A / 0.2A
Collector-emitter saturation voltage	VCE(sat)	-	1.5	-	V	IC / IB = 4A / 0.2A
Base-emitter saturation voltage	VBE(sat)	-	-	1.2	V	IC / IB = 3A / 0.15A
DC current transfer ratio	hFE	82	-	270	-	VCE / IC = 2V / 1A
Transition frequency	fT	-	120	-	MHz	VCB = 10V , IE = 0.5A , f = 30MHz
Output capacitance	Cob	-	10	-	pF	VCE = 10V , IE = 0A , f = 1MHz
Turn-on time	ton	-	0.3	-	s	IC = 3A , RL = 10, VCC = 30V (Measured using pulse current)
Storage time	tstg	-	-	1.5	s	IB1 = IB2 = 0.15A (Measured using pulse current)
Fall time	tf	-	0.1	0.3	s	IC = 3A , RL = 10, VCC = 30V (Measured using pulse current)
Collector power dissipation	PC	-	-	1	W	Ta=25C
Collector power dissipation	PC	-	-	10	W	Tc=25C
Junction temperature	Tj	-	-	150	C	-
Storage temperature	Tstg	-	-55	+150	C	-