China Power Factor Correction Silicon Carbide Diode REASUNOS RSS08065G with High Speed Switching Capabilities for sale

Power Factor Correction Silicon Carbide Diode REASUNOS RSS08065G with High Speed Switching Capabilities

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Product Description

Reasunos RSS08065G Silicon Carbide Schottky Diode

The Reasunos RSS08065G is a Silicon Carbide Schottky Diode designed for high-performance applications such as Power Factor Correction, Server Mode Power Supplies, and Uninterruptible Power Supplies. It features a low forward voltage drop, high-speed switching capabilities, and a positive temperature coefficient, ensuring temperature-independent switching behavior.

Product Attributes

Brand: Reasunos
Material: Silicon Carbide
Origin: China (implied by copyright and company name)

Technical Specifications

Part Number	Package	Marking	Packing Qty.	VRRM (V)	IF (A) @ TC=120	QC (nC)	Repetitive Peak Reverse Voltage (V)	Surge Peak Reverse Voltage (V)	DC Blocking Voltage (V)	Forward Current (A)	Non-Repetitive Forward Surge Current (A)	Non-Repetitive Peak Forward Surge Current (A)	Repetitive Peak Forward Surge Current (A)	Power Dissipation (W)	Operating Junction and Storage Temperature (C)	Forward Voltage (V)	Reverse Current (A)	Total Capacitance (pF)	Total Capacitive Charge (nC)	Capacitance Stored Energy (J)	Thermal Resistance Junction to Case (C/W)
RSS08065G	PDFN5X6	RSS08065G	5000 PCS	650	8	22	650	650	650	8 (TC=120)	75 (TC=25, tp=10ms)	680 (TC=25, tP=10s)	60 (TC=25, tp=10ms)	117 (TC=25), 51 (TC=110)	-55 to 175	1.40 (Typ., IF=8A, TJ=25), 1.70 (Max., IF=8A, TJ=25), 1.70 (Typ., IF=8A, TJ=175), 2.00 (Max., IF=8A, TJ=175)	1 (Typ., VR=650V, TJ=25), 20 (Max., VR=650V, TJ=25), 20 (Typ., VR=650V, TJ=175), 200 (Max., VR=650V, TJ=175)	440 (Typ., VR=0V, TJ=25, f=1MHz), 44 (Typ., VR=200V, TJ=25, f=1MHz), 38 (Typ., VR=400V, TJ=25, f=1MHz)	22 (VR=400V, IF=10A, TJ=25)	5.8 (VR=400V)	1.75 (Typ.)