Silicon Carbide Schottky Diode REASUNOS RSS06065B with 650 Volt Surge Peak Reverse Voltage and TO220-2 Package

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

RSS06065B Silicon Carbide Schottky Diode

The RSS06065B is a Silicon Carbide Schottky Diode designed for applications requiring high-speed switching and low forward voltage drop. It features a positive temperature coefficient and temperature-independent switching behavior, making it suitable for Power Factor Correction, Sever Mode Power Supplies, and Uninterruptible Power Supply systems.

Product Attributes

Brand: Reasunos
Material: Silicon Carbide
Package: TO-220-2

Technical Specifications

Part Number	VRRM (V)	IF (A)	QC (nC)	Package	Marking	Packing	Qty.
RSS06065B	650	6 (TC150)	23	TO-220-2	RSS06065B	Tube	50 PCS

Symbol	Parameter	Value	Unit	Test Conditions
VRRM	Repetitive Peak Reverse Voltage	650	V
VRSM	Surge Peak Reverse Voltage	650	V
VR	DC Blocking Voltage	650	V
IF	Forward Current	6	A	TC150
IFSM	Non-Repetitive Forward Surge Current	50	A	TC = 25, tp = 10ms Half Sine Wave
IF,Max	Non-Repetitive Peak Forward Surge Current	520	A	TC=25C, tP= 10 s, Pulse
IFRM	Repetitive Peak Forward Surge Current	35	A	TC = 25, tp = 10ms Half Sine Wave
Ptot	Power Dissipation	70	W	TC = 25
Ptot	Power Dissipation		W	TC = 110
TJ,TSTG	Operating Junction and Storage Temperature	-55 to175

Symbol	Parameter	Typ.	Max.	Unit	Test Conditions	Note
VF	Forward Voltage	1.4	1.8	V	IF =6A, TJ = 25
VF	Forward Voltage	1.6		V	IF =6A, TJ = 175
IR	Reverse Current	2	120	A	VR =650V, TJ = 25
IR	Reverse Current	15	30	A	VR = 650V, TJ = 175
C	Total Capacitance	423		pF	VR=0V, TJ = 25, f=1MHz
C	Total Capacitance	44		pF	VR=200V, TJ = 25, f=1MHz
C	Total Capacitance	37		pF	VR=400V, TJ = 25, f = 1MHz
QC	Total Capacitive Charge	23		nC	VR =400V,TJ = 25	Qc= 0 VR C V dV