Medium power transistor ROHM 2SC5876U3T106Q with high speed switching and performance in amplification circuits

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Product Description

Product Overview

The 2SC5876U3 is a medium power transistor designed for high-speed switching and low-frequency amplification. It features high-speed switching capabilities with a typical fall time of 80ns, low saturation voltage (typically 150mV), and strong discharge power for inductive and capacitive loads. This transistor complements the 2SA2088U3 and is suitable for applications requiring fast response and efficient power handling.

Product Attributes

Brand: ROHM
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
Collector-base breakdown voltage	BVCBO	IC = 100A	60	V
Collector-emitter breakdown voltage	BVCEO	IC = 1mA	60	V
Emitter-base breakdown voltage	BVEBO	IE = 100A	6	V
Collector current	IC		500	mA
Collector current (Pulsed)	ICP*1	Pw=10ms	1.0	A
Power dissipation	PD*2	Each terminal mounted on a reference land.	200	mW
Junction temperature	Tj		150
Range of storage temperature	Tstg		-55 to +150
Collector cut-off current	ICBO	VCB = 40V	-	1	A
Emitter cut-off current	IEBO	VEB = 4V	-	1	A
Collector-emitter saturation voltage	VCE(sat)	IC = 100mA, IB = 10mA	- 150 300	mV
DC current gain	hFE	VCE = 2V, IC = 50mA	120 - 390	-
Transition frequency	fT*3	VCE = 10V, IE = -100mA, f = 100MHz	- 300	MHz
Output capacitance	Cob	VCB = 10V, IE = 0mA, f = 1MHz	- 5	pF
Turn-On time	ton	IC = 500mA, IB1 = 50mA, IB2 = -50mA, VCC 25V, RL = 50	- 70	ns
Storage time	tstg		- 130	ns
Fall time	tf		- 80	ns