650V Silicon Carbide Diode REASUNOS RSS06065F with High Speed Switching and Low Forward Voltage Drop

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Product Description

Product Overview

The RSS06065F is a Silicon Carbide Schottky Diode designed for high-performance applications such as Power Factor Correction, Sever Mode Power Supplies, and Uninterruptible Power Supplies. It features a low forward voltage drop, high-speed switching capabilities, and a positive temperature coefficient, ensuring temperature-independent switching behavior.

Product Attributes

Brand: Reasunos
Material: Silicon Carbide
Package: TO-220F
Packing: Tube (50 PCS)

Technical Specifications

Part Number	VRRM	IF (TC=150)	QC	Package	Marking	Packing Qty.
RSS06065F	650V	6A	17nC	TO-220F	RSS06065F	50 PCS

Symbol	Parameter	Value	Unit	Test Conditions	Note
VRRM	Repetitive Peak Reverse Voltage	650	V
VRSM	Surge Peak Reverse Voltage	650	V
VR	DC Blocking Voltage	650	V
IF	Forward Current	6	A	TC = 150
IFSM	Non-Repetitive Forward Surge Current	65	A	TC = 25, tp = 10ms Half Sine Wave
IF,Max	Non-Repetitive Peak Forward Surge Current	520	A	TC=25C, tP= 10 s, Pulse
IFRM	Repetitive Peak Forward Surge Current	40	A	TC = 25, tp = 10ms Half Sine Wave
TC	Maximum Case Temperature	153
TJ,TSTG	Operating Junction and Storage Temperature	-55 to175

Symbol	Parameter	Typ.	Max.	Unit	Test Conditions	Note
VF	Forward Voltage	1.40	1.75	V	IF = 6A, TJ = 25
VF	Forward Voltage	1.7	2.0	V	IF = 6A, TJ = 175
IR	Reverse Current	2	40	A	VR = 650V, TJ = 25
IR	Reverse Current	20	200	A	VR = 650V, TJ = 175
Cj	Total Capacitance	33		pF	VR=0V, TJ = 25, f=1MHz
Cj	Total Capacitance	33		pF	VR=200V, TJ = 25, f=1MHz
Cj	Total Capacitance	28		pF	VR=400V, TJ = 25, f = 1MHz
QC	Total Capacitive Charge	17		nC	VR =400V,TJ = 25	Qc= 0
Ec	Capacitance Stored Energy	4.3		uJ	VR =400V