High gain amplifier transistor ROHM 2SB852KT146B with built in resistor and Darlington configuration

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Product Description

Product Overview

The 2SB852K is a high-gain amplifier transistor featuring a Darlington connection for enhanced DC current gain. It includes a built-in 4k resistor between the base and emitter and complements the 2SD1383K. This transistor is suitable for high gain amplifier applications.

Product Attributes

Brand: ROHM
Package: SOT-346 (SMT3)
Taping Code: T146
Reel Size: 180 mm
Tape Width: 8 mm
Basic Ordering Unit: 3000 pcs
Marking: U

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings (Ta = 25C)
Collector-base voltage	VCBO				-40	V
Collector-emitter voltage	VCES				-32	V
Emitter-base voltage	VEBO				-6	V
Collector current	IC				-0.3	A
Collector current (Pulsed)	ICP*1	Pw=10ms, duty=1/15			-1.5	A
Power dissipation	PD*2	Each terminal mounted on a reference land			200	mW
Junction temperature	Tj				150
Range of storage temperature	Tstg		-55		+150
Electrical Characteristics (Ta = 25C)
Collector-base breakdown voltage	BVCBO	IC = -100A	-40	-	-	V
Collector-emitter breakdown voltage	BVCES	IC = -1mA, RBE = 0	-32	-	-	V
Emitter-base breakdown voltage	BVEBO	IE = -100A	-6	-	-	V
Collector cut-off current	ICBO	VCB = -24V	-	-	-1	A
Emitter cut-off current	IEBO	VEB = -4.5V	-	-	-1	A
Collector-emitter saturation voltage	VCE(sat)*3	IC = -200mA, IB = -0.4mA	-	-	-1.5	V
DC current gain	hFE*3	VCE = -5V, IC = -100mA	1k	-	-
Transition frequency	fT*4	VCE = -5V, IE = 10mA, f = 100MHz	-	200	-	MHz
Output capacitance	Cob	VCB = -10V, IE = 0mA, f = 1MHz	-	3.0	-	pF