650V 240m Gallium Nitride FET Renesas TP65H300G4LSGB-TR Gen IV SuperGaN technology with PQFN package
Product Overview
The TP65H300G4LSGB is a 650V, 240m Gallium Nitride (GaN) FET, utilizing Renesass Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering enhanced reliability and performance. The Gen IV SuperGaN platform employs advanced epitaxy and patented design technologies to simplify manufacturing and improve efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and reverse recovery charge. It is designed for increased efficiency in both hard- and soft-switched circuits, leading to higher power density, reduced system size and weight, and lower overall system cost. The device is easy to drive with common gate drivers and features a GSD pin layout beneficial for high-speed designs.
Product Attributes
- Brand: Renesas
- Platform: Gen IV SuperGaN
- Material: Gallium Nitride (GaN)
- Certifications: JEDEC-qualified, RoHS compliant, Halogen-free packaging
- Package: 8x8 PQFN (source tab)
Technical Specifications
| Part Number | Package | VDS (V) min | VDSS(TR) (V) max | RDS(on) (m) max* | QRR (nC) typ | QG (nC) typ | VDSS (V) | VGSS (V) | PD (W) @TC=25C | ID (A) @TC=25C | IDM (A) | TC (C) | TJ (C) | RJC (C/W) typ | RJA (C/W) typ | VGS(th) (V) | RDS(on)eff (m) TJ=25C | RDS(on)eff (m) TJ=150C | IDSS (A) TJ=25C | IDSS (A) TJ=150C | IGSS (nA) | CISS (pF) | COSS (pF) | CRSS (pF) | CO(er) (pF) | CO(tr) (pF) | QG (nC) | QGS (nC) | QGD (nC) | QOSS (nC) | tD(on) (ns) | tR (ns) | tD(off) (ns) | tF (ns) | IS (A) TC=100C | VSD (V) IS=8.5A | VSD (V) IS=4.5A | tRR (ns) | QRR (nC) |
| TP65H300G4LSGB-TR* | 8x8 PQFN | 650 | 800 | 312 | 23 | 9.6 | 650 | 10 | 21 | 6.5 | 30 | -55 to +150 | -55 to +150 | 5.5 | 50 | 2 - 2.8 | 240 | 492 | 1.2 | 8 | 100 | 414 | 16 | 1 | 24 | 47 | 4.5 | 1.5 | 0.6 | 19 | 33.6 | 4.4 | 20 | 3.6 | 3.7 | 1.7 | 1.2 | 16 | 23 |
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