High voltage NPN transistor ROHM 2SD2211T100R offering 160V breakdown voltage and high transition frequency

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Product Description

Product Overview

The 2SD2211, 2SD1918, and 2SD1857A are NPN power transistors designed for high voltage applications. They offer a high breakdown voltage of 160V, low collector output capacitance, and a high transition frequency, making them suitable for various electronic circuits. These transistors complement the 2SB1275 and 2SB1236A series.

Product Attributes

Brand: ROHM
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	2SD2211	2SD1918	2SD1857A	Unit	Conditions
Collector-base breakdown voltage	BVCBO	160	160	160	V	IC = 50A
Collector-emitter breakdown voltage	BVCEO	160	160	160	V	IC = 1mA
Emitter-base breakdown voltage	BVEBO	5	5	5	V	IE = 50A
Collector cutoff current	ICBO	-	-	-	A	VCB = 120V
Emitter cutoff current	IEBO	-	-	-	A	VEB = 4V
Collector-emitter saturation voltage	VCE(sat)	-	-	-	V	IC/IB = 1A/0.1A
DC current transfer ratio	hFE	82-270	390	390	-	VCE = 5V, IC = 1A (2SD2211, 2SD1918); VCE = 5V, IE = -0.1A, f = 30MHz (2SD1857A)
Transition frequency	fT	80	80	80	MHz	VCE = 5V, IE = -0.1A, f = 30MHz
Output capacitance	Cob	20	20	20	pF	VCB = 10V, IE = 0A, f = 1MHz
Base-emitter saturation voltage	VBE(sat)	-	-	-	V	IC/IB = 1A/0.1A
Collector power dissipation (Printed circuit board)	PC	1	1	1	W	Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Collector power dissipation (Ceramic board)	PC	2	2	2	W	When mounted on a 40 x 40 x 0.7mm ceramic board. (Tc=25C)
Collector current (DC)	IC	1.5	1.5	1.5	A(DC)	-
Collector current (Pulse)	IC	-	-	-	A(Pulse)	Single pulse Pw=100ms
Junction temperature	Tj	150	150	150	C	-
Storage temperature	Tstg	-55 ~ +150	-55 ~ +150	-55 ~ +150	C	-