High Current Low Frequency Transistor ROHM 2SA2030T2L Ideal for Amplifier and Driver Circuit Designs
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Product Description
2SA2030 / 2SA2018E3 / 2SA2119K Low Frequency Transistor
This series of low-frequency transistors, including models 2SA2030, 2SA2018E3, and 2SA2119K, are designed for applications requiring high current capabilities and low collector-emitter saturation voltage. They are suitable for low-frequency amplifier and driver circuits.
Product Attributes
- Brand: ROHM
- Origin: Japan (implied by ROHM's origin and datasheet language)
Technical Specifications
| Part No. | Package | VCEO | IC | VCE(sat) (Typ.) | hFE (Typ.) | fT (Typ.) | Power Dissipation (PD) |
| 2SA2030 | SOT-723 (VMT3) | -12V | -500mA | -250mV (at IC=-200mA/IB=-10mA) | - | - | 150mW |
| 2SA2018E3 | SOT-416 (EMT3) | -12V | -500mA | -250mV (at IC=-200mA/IB=-10mA) | - | - | 150mW |
| 2SA2119K | SOT-346 (SMT3) | -12V | -500mA | -250mV (at IC=-200mA/IB=-10mA) | - | - | 200mW |
Absolute Maximum Ratings (Ta = 25C)
| Parameter | Symbol | Values | Unit |
| Collector-base voltage | VCBO | -15 | V |
| Collector-emitter voltage | VCEO | -12 | V |
| Emitter-base voltage | VEBO | -6 | V |
| Collector current | IC | -500 | mA |
| Collector current (Pulsed) | ICP*1 | -1 | A |
| Power dissipation (2SA2030) | PD*2 | 150 | mW |
| Power dissipation (2SA2018E3) | PD*2 | 150 | mW |
| Power dissipation (2SA2119K) | PD*2 | 200 | mW |
| Junction temperature | Tj | 150 | |
| Range of storage temperature | Tstg | -55 to +150 |
Electrical Characteristics (Ta = 25C)
| Parameter | Symbol | Conditions | Values (Min.) | Values (Typ.) | Values (Max.) | Unit |
| Collector-base breakdown voltage | BVCBO | IC = -10A | -15 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = -1mA | -12 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = -10A | -6 | - | - | V |
| Collector cut-off current | ICBO | VCB = -15V | - | - | -100 | nA |
| Emitter cut-off current | IEBO | VEB = -6V | - | - | -100 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = -200mA, IB = -10mA | - | - | -250 | mV |
| DC current gain | hFE | VCE = -2V, IC = -10mA | 270 | - | 680 | - |
| Transition frequency | fT | VCE = -2V, IE = 10mA, f = 100MHz | - | 260 | - | MHz |
| Output capacitance | Cob | VCB = -10V, IE = 0A, f = 1MHz | - | 6.5 | - | pF |
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Sellina