50 volt 2 amp transistor ROHM 2SCR553PT100 designed for amplification and switching in electronic applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

2SCR553P Middle Power Transistors (50V / 2A)

The 2SCR553P is a middle power transistor designed for low frequency amplification and high-speed switching applications. It features low saturation voltage, typically VCE(sat) = 350mV (Max.), and high-speed switching capabilities, making it suitable for demanding electronic circuits.

Product Attributes

Brand: ROHM
Package: SOT-89 (MPT3)
Marking: NG
Not Recommended for New Designs

Technical Specifications

Parameter	Symbol	Conditions	Values	Unit
Collector-base voltage	VCBO		50	V
Collector-emitter voltage	VCEO		50	V
Emitter-base voltage	VEBO		6	V
Collector current	IC		2	A
Collector peak current	ICP*1	Pw=10ms, Single Pulse	4	A
Power dissipation	PD*2	Each terminal mounted on a reference land.	0.5	W
Power dissipation	PD*3	Mounted on a ceramic board.(40x40x0.7mm)	2.0	W
Junction temperature	Tj		150
Range of storage temperature	Tstg		-55 to +150
Collector-base breakdown voltage	BVCBO	IC = 100A	50	V
Collector-emitter breakdown voltage	BVCEO	IC = 1mA	50	V
Emitter-base breakdown voltage	BVEBO	IE = 100A	6	V
Collector cut-off current	ICBO	VCB = 50V	1.0	A
Emitter cut-off current	IEBO	VEB = 4V	1.0	A
Collector-emitter saturation voltage	VCE(sat)*4	IC = 700mA, IB = 35mA	350 (Max.)	mV
Base-emitter saturation voltage	VBE(sat)*4	IC = 700mA, IB = 35mA	1.3 (Max.)	V
DC current gain	hFE	VCE = 2V, IC = 50mA	180 - 450	-
Transition frequency	fT*4	VCE = 10V, IE = -300mA, f = 100MHz	360 (Typ.)	MHz
Output capacitance	Cob	VCB = 10V, IE = 0A, f = 1MHz	12 (Typ.)	pF
Turn-On time	ton	IC = 1A, IB1 = 100mA, IB2 = -100mA, VCC 10V, RL = 10	45 (Max.)	ns
Storage time	tstg		420 (Max.)	ns
Fall time	tf		75 (Max.)	ns