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Compact dual transistor emitter ROHM UMG8NTR designed for inverter and interface driver applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The EMG8 / UMG8N is a dual digital transistor emitter featuring two DTC143Z chips integrated within a single EMT or UMT package. This configuration significantly reduces mounting costs and board space. It is designed for applications such as inverters, interfaces, and drivers, offering efficient performance.

Product Attributes

  • Brand: ROHM
  • RoHS Compliant: Yes

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMG8 SOT-553 (EMT5) 1616 T2R 180 8 8000 G8
UMG8N SOT-353 (UMT5) 2021 TR 180 8 3000 G8
Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common>
Supply voltage VCC 50 V
Input voltage VIN -5 30 V
Output current IO 100 mA
Collector current IC(MAX)*1 100 mA
Power dissipation PD*2*3 EMG8 150 mW/Total
Power dissipation PD*2*3 UMG8N 150 mW/Total
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common>
Input voltage VI(off) VCC = 5V, IO = 100A - - 0.5 V
Input voltage VI(on) VO = 0.3V, IO = 5mA 1.3 - - V
Output voltage VO(on) IO = 5mA, II = 250A - 100 300 mV
Input current II VI = 5V - - 1.8 mA
Output current IO(off) VCC = 50V, VI = 0V - - 500 nA
DC current gain GI VO = 5V, IO = 10mA 80 - - -
Input resistance R1 - 3.29 6.11 k
Resistance ratio R2/R1 - 8 12 -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.


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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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