Medium power transistor ROHM 2SC5876T106R designed for high speed switching and low saturation voltage performance

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Product Description

Product Overview

The 2SC5876 is a medium power transistor designed for high-speed switching applications. It features high speed switching with a typical fall time of 80ns, low saturation voltage (typically 150mV at IC=100mA, IB=10mA), and strong discharge power for inductive and capacitance loads. This transistor complements the 2SA2088 and is suitable for low frequency amplifiers and high-speed switching applications.

Product Attributes

Brand: ROHM
Not Recommended for New Designs

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
Collector-base voltage	VCBO		60	V
Collector-emitter voltage	VCEO		60	V
Emitter-base voltage	VEBO		6	V
Collector current	IC		500	mA
Collector current (Pulsed)	ICP*1	Pw=10ms	1.0	A
Power dissipation	PD*2	Each terminal mounted on a reference land.	200	mW
Junction temperature	Tj		150
Range of storage temperature	Tstg		-55 to +150
Collector-base breakdown voltage	BVCBO	IC = 100A	60	V
Collector-emitter breakdown voltage	BVCEO	IC = 1mA	60	V
Emitter-base breakdown voltage	BVEBO	IE = 100A	6	V
Collector cut-off current	ICBO	VCB = 40V	-	1
Emitter cut-off current	IEBO	VEB = 4V	-	1
Collector-emitter saturation voltage	VCE(sat)	IC = 100mA, IB = 10mA	- 150 300	mV
DC current gain	hFE	VCE = 2V, IC = 50mA	120 - 390	-
Transition frequency	fT*3	VCE = 10V, IE = -100mA, f = 100MHz	- 300	MHz
Output capacitance	Cob	VCB = 10V, IE = 0mA, f = 1MHz	- 5	pF
Turn-On time	ton*3	IC = 500mA, IB1 = 50mA, IB2 = -50mA, VCC 25V, RL = 50	- 70	ns
Storage time	tstg*3		- 130	ns
Fall time	tf*3		- 80	ns