Low Frequency PNP Silicon Transistor ROHM 2SB1386T100R Featuring Low VCEsat and High DC Current Gain

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Product Description

Product Overview

The 2SB1386 / 2SB1412 / 2SB1326 are PNP silicon transistors designed for low-frequency applications, offering low VCE(sat) of -0.35V (Typ.) and excellent DC current gain characteristics. They serve as complements to the 2SD2098 / 2SD2118 / 2SD2097 series.

Product Attributes

Brand: ROHM
Structure: Epitaxial planar type
Material: Silicon

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit	2SB1386	2SB1412	2SB1326
Collector-base voltage	VCBO				-30	V	●	●	●
Collector-emitter voltage	VCEO				-20	V	●	●	●
Emitter-base voltage	VEBO				-6	V	●	●	●
Collector current (DC)	IC				-5	A	●	●	●
Collector current (Pulse)	IC(Pulse)	*1 Single pulse, Pw=10ms			-10	A	●	●	●
Collector power dissipation (Ta=25C)	PC	*3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger.			1	W	●	●	●
Collector power dissipation (Tc=25C)	PC	*2 When mounted on a 40400.7 mm ceramic board.			10	W	●	●	●
Junction temperature	Tj				150	C	●	●	●
Storage temperature	Tstg		-55		150	C	●	●	●
Collector-base breakdown voltage	BVCBO	IC= -50A	-30			V	●	●	●
Collector-emitter breakdown voltage	BVCEO	IC= -1mA	-20			V	●	●	●
Emitter-base breakdown voltage	BVEBO	IE= -50A	-6			V	●	●	●
Collector cutoff current	ICBO	VCB= -20V		-0.5		A	●	●	●
Emitter cutoff current	IEBO	VEB= -5V		-0.5		A	●	●	●
DC current transfer ratio	hFE	VCE= -2V, IC= -0.5A	82		390		●	●	●
DC current transfer ratio	hFE	VCE= -2V, IC= -0.5A	120		390
DC current transfer ratio	hFE	VCE= -2V, IC= -0.5A	180		390
Collector-emitter saturation voltage	VCE(sat)	IC/IB= -4A / -0.1A		-0.35		V	●	●	●
Transition frequency	fT	VCE= -6V, IE=50mA, f=100MHz		60		MHz	●	●	●
Output capacitance	Cob	VCB= -20V, IE=0A, f=1MHz		-	120	pF	●	●	●