Low collector emitter saturation voltage npn transistor ROHM 2SC5824T100R for driver applications

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Product Description

Product Overview

The 2SC5824 is a middle power NPN transistor designed for driver applications. It offers low VCE(sat) of 0.50V (Max.) at IC/IB=2A/200mA, making it suitable for efficient power management. This transistor is lead-free and RoHS compliant, ensuring environmental responsibility.

Product Attributes

Brand: ROHM
Complementary PNP Type: 2SA2071
Certifications: Lead Free/RoHS Compliant

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Collector-emitter breakdown voltage	BVCEO	IC = 1mA	60	-	-	V
Collector-base breakdown voltage	BVCBO	IC = 100A	60	-	-	V
Emitter-base breakdown voltage	BVEBO	IE = 100A	6	-	-	V
Collector cut-off current	ICBO	VCB = 40V	-	-	1	A
Emitter cut-off current	IEBO	VEB = 4V	-	-	-	A
DC current gain	hFE	VCE = 2V, IC = 100mA	120	-	390	-
Collector-emitter saturation voltage	VCE(sat)	IC = 2A, IB = 200mA	-	200	500	mV
Output capacitance	Cob	VCB = 10V, IE = 0A f = 1MHz	-	20	-	pF
Transition frequency	fT	VCE = 10V, IE = 100mA f=10MHZ	-	200	-	MHz
Storage time	tstg	IC=3A IB1=300mA IB2= 300mA VCC25V	-	150	-	ns
Turn-on time	ton	IC=3A IB1=300mA IB2= 300mA VCC25V	-	50	-	ns
Fall time	tf	IC=3A IB1=300mA IB2= 300mA VCC25V	-	30	-	ns

Parameter	Symbol	Value	Unit
Collector current	IC	3.0	A
Collector pulsed current	ICP *1	6.0	A
Power dissipation (reference land)	PD *2	0.5	W
Power dissipation (ceramic board)	PD *3	2.0	W
Junction temperature	Tj	150	C
Range of storage temperature	Tstg	-55 to +150	C