Dual digital transistor ROHM UMD22NTR combining NPN and PNP transistors for driver circuit solutions
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The EMD22 / UMD22N are general-purpose dual digital transistors, integrating both NPN (DTr1) and PNP (DTr2) transistor chips within a single package. These devices are designed for applications requiring compact solutions, offering halved mounting costs and area due to their integrated nature. They are suitable for automatic mounting machines and feature independent transistor elements to prevent interference. Key applications include inverters, interfaces, and driver circuits.
Product Attributes
- Brand: ROHM
- RoHS: Yes
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMD22 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | D22 |
| UMD22N | SOT-363 (UMT6) | 2021 | TR | 180 | 8 | 3000 | D22 |
Absolute Maximum Ratings (Ta = 25C)
| Parameter | Symbol | DTr1 (NPN) | DTr2 (PNP) | Unit |
|---|---|---|---|---|
| Supply voltage | VCC | 50 | -50 | V |
| Input voltage | VIN | -5 to 30 | -30 to 5 | V |
| Output current | IO | 100 | -100 | mA |
| Collector current (MAX.) | IC(MAX)*1 | 100 | -100 | mA |
| Power dissipation (Total) | PD*2*3 | 150 | mW | |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
Electrical Characteristics (Ta = 25C) - DTr1 (NPN)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input voltage (OFF) | VI(off) | VCC = 5V, IO = 100A | - | - | 0.5 | V |
| Input voltage (ON) | VI(on) | VO = 0.3V, IO = 5mA | 1.3 | - | - | V |
| Output voltage (ON) | VO(on) | IO = 5mA, II = 250A | - | 100 | 300 | mV |
| Input current | II | VI = 5V | - | - | 1.8 | mA |
| Output current (OFF) | IO(off) | VCC = 50V, VI = 0V | - | - | 500 | nA |
| DC current gain | GI | VO = 5V, IO = 10mA | 80 | - | - | - |
| Input resistance | R1 | - | - | 4.7 | - | k |
| Resistance ratio | R2/R1 | - | - | 10 | - | - |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
Electrical Characteristics (Ta = 25C) - DTr2 (PNP)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input voltage (OFF) | VI(off) | VCC = -5V, IO = -100A | - | - | -0.5 | V |
| Input voltage (ON) | VI(on) | VO = -0.3V, IO = -5mA | -1.3 | - | - | - |
| Output voltage (ON) | VO(on) | IO = -5mA, II = -250A | - | -100 | -300 | mV |
| Input current | II | VI = -5V | - | - | -1.8 | mA |
| Output current (OFF) | IO(off) | VCC = -50V, VI = 0V | - | - | -500 | nA |
| DC current gain | GI | VO = -5V, IO = -10mA | 80 | - | - | - |
| Input resistance | R1 | - | - | 4.7 | - | k |
| Resistance ratio | R2/R1 | - | - | 10 | - | - |
| Transition frequency | fT*1 | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz |
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina