PNP epitaxial planar silicon transistor ROHM 2SA2092TLQ designed for amplification and fast switching

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Product Description

Product Overview

The ROHM 2SA2092 is a PNP epitaxial planar silicon transistor designed for high-speed switching and low-frequency amplification. It features high-speed switching with a typical fall time of 30ns at IC = -1A, low saturation voltage (Typ. -200mV at IC = -500mA, IB = -50mA), strong discharge resistance for inductive and capacitance loads, and low switching noise. This transistor is suitable for applications requiring fast switching characteristics and efficient amplification.

Product Attributes

Brand: ROHM
Structure: PNP epitaxial planar silicon transistor
Packaging: TSMT3 (Taping)

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Collector-base voltage	VCBO			-60	V
Collector-emitter voltage	VCEO			-60	V
Emitter-base voltage	VEBO			-6	V
Collector current (DC)	IC			-1	A
Collector current (PULSE, Pw=10ms)	ICP			-2	A
Power dissipation (Each terminal mounted on a recommended land)	PC			500	mW	*1
Junction temperature	Tj			150	C
Range of storage temperature	Tstg	-55		+150	C
Collector-emitter breakdown voltage	BVCEO	-60			V	IC= -100A
Collector-base breakdown voltage	BVCBO	-60			V	IC= -1mA
Emitter-base breakdown voltage	BVEBO	-6			V	IE= -100A
Collector cut-off current	ICBO			-1.0	A	VCB= -40V, VEB= -4V
Emitter cut-off current	IEBO			-1.0	A
Collector-emitter saturation voltage	VCE(sat)		-200	-500	mV	IC= -500mA, IB= -50mA (*1)
DC current gain	hFE	120		300		VCE= -2V, IC= -100mA (*3)
Transition frequency	fT		270		MHz	VCE= -10V, IE=100mA, f=10MHz (*1)
Collector output capacitance	Cob		15	30	pF	VCB= -10V, IE=0, f=1MHz (*1)
Turn-on time	ton			-	ns	VCC= -25V, IC= -1A, IB1= -100mA, IB2=100mA (*2)
Storage time	tstg			-	ns	VCC= -25V, IC= -1A, IB1= -100mA, IB2=100mA (*2)
Fall time	tf		30		ns	VCC= -25V, IC= -1A, IB1= -100mA, IB2=100mA (*2)