Surface mount Schottky diode R O SS510BF designed for high frequency inverter and polarity protection
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SS52BF THRU SS520BF series are surface mount Schottky barrier rectifiers designed for high efficiency operation. Featuring a metal silicon junction with majority carrier conduction, these rectifiers offer ultra-low forward voltage drop and low power losses. They possess high forward surge current capability and are suitable for low voltage, high frequency inverters, free wheeling, and polarity protection applications. The devices meet MSL level 1, per J-STD-020, with a maximum peak of 260.
Product Attributes
- Brand: (Hongjiacheng)
- Origin: Zhuhai Hongjiacheng Technology co., Ltd
- Material: Metal silicon junction
- Case: SMBF
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
- Molding Compound: Meets UL 94V-0 flammability rating, RoHS-compliant, halogen-free
Technical Specifications
| Parameter | Symbol | Unit | SS52BF | SS54BF | SS545BF | SS56BF | SS58BF | SS510BF | SS515BF | SS520BF |
| Maximum Ratings | ||||||||||
| Maximum Repetitive Peak Reverse Voltage | VRRM | V | 20 | 40 | 45 | 60 | 80 | 100 | 150 | 200 |
| Maximum RMS Voltage | VRMS | V | 14 | 28 | 31.5 | 42 | 56 | 70 | 105 | 140 |
| Maximum DC blocking Voltage | VDC | V | 20 | 40 | 45 | 60 | 80 | 100 | 150 | 200 |
| Maximum Average Forward Rectified Current @ 60Hz sinewave, Resistance load,TL (Fig.1) | IF(AV) | A | 5.0 | |||||||
| Non-repetitive Peak Forward Surge Current @ t=8.3ms Half-sine wave | IFSM | A | 120 | |||||||
| Storage temperature | Tstg | -55 ~ +150 | ||||||||
| Junction temperature | Tj | -55 ~ +150 | ||||||||
| Typical Thermal Resistance (Junction to Ambient) | RJ-A | /W | 78 | |||||||
| Typical Thermal Resistance (Junction to Lead) | RJ-L | /W | 20 | |||||||
| Electrical Characteristics (Ta=25 Unless otherwise specified) | ||||||||||
| Maximum instantaneous forward voltage (IF=5.0A) | VF | V | 0.55 | 0.70 | 0.85 | 0.95 | ||||
| Maximum DC reverse current at rated DC blocking voltage (VR=VDC, TA=25) | IR1 | mA | 0.5 | |||||||
| Maximum DC reverse current at rated DC blocking voltage (VR=VDC, TA=100) | IR2 | mA | 50 | |||||||
| Typical junction capacitance (4.0V DC, 1MHz) | CJ | pF | 800 | 500 | ||||||
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