NPN silicon transistor ROHM IMX9T110 epitaxial planar type suitable for general electronic equipment

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Product Description

Product Overview

The IMX9 is a general-purpose, isolated dual transistor featuring two 2SD2114K chips in a SMT package. Its independent transistor elements prevent interference, and it is compatible with SMT3 automatic mounting machines, offering reduced mounting costs and area. This NPN silicon transistor is suitable for general electronic equipment.

Product Attributes

Brand: ROHM
Type: Epitaxial planar type NPN silicon transistor
Material: Silicon
Packaging: SMT6 (EIAJ: SC-74)

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Absolute Maximum Ratings (Ta = 25C)
Collector-base voltage	VCBO			25	V
Collector-emitter voltage	VCEO			20	V
Emitter-base voltage	VEBO			12	V
Collector current	IC			500	mA
Junction temperature	Tj			150	C
Storage temperature	Tstg	55		+150	C
Power dissipation	Pd			300(TOTAL)	mW	* 200mW per element must not be exceeded.
Electrical Characteristics (Ta = 25C)
Collector-base breakdown voltage	BVCBO	25			V	IC=10A
Collector-emitter breakdown voltage	BVCEO	20			V	IC=1mA
Emitter-base breakdown voltage	BVEBO	12			V	IE=10A
Collector cutoff current	ICBO			0.18	A	VCB=20V
Emitter cutoff current	IEBO			0.5	A	VEB=10V
DC current transfer ratio	hFE	560		2700		VCE=3V, IC=10mA
Collector-emitter saturation voltage	VCE(sat)		0.4		V	IC/IB=500mA/20mA
Transition frequency	fT		350		MHz	VCE=10V, IE=50mA, f=100MHz
Output capacitance	Cob		8		pF	VCB=10V, IE=0A, f=1MHz
Output On-resistance	Ron		0.8			IB=1mA, Vi=100mVrms, f=1kHz