ROHM DTC143TUAT106 NPN Digital Transistor Featuring Built in Bias Resistors for Switching and Interface

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Product Description

Product Overview

The DTC143T series are NPN digital transistors featuring built-in biasing resistors, simplifying circuit design by eliminating the need for external input resistors. These transistors are ideal for configuring inverter circuits and offer advantages such as complete isolation for negative biasing and elimination of parasitic effects. They are suitable for switching, inverter, interface, and driver circuits. Complementary PNP types and complex transistor configurations are also available.

Product Attributes

Brand: ROHM
Type: NPN Digital Transistors (Bias Resistor Built-in)
Certifications: Lead Free/RoHS Compliant

Technical Specifications

Model	Package	VCEO (V)	IC (mA)	R1 (k)	Power Dissipation (mW)	Package Size	Taping Code	Reel Size (mm)	Tape Width (mm)	Basic Ordering Unit (pcs)	Marking
DTC143TM	VMT3 (SC-105AA)	50	100	4.7	150*1	1212	T2L	180	8	8000	03
DTC143TEB	EMT3F (SC-89)	50	100	4.7	150	1616	TL	180	8	3000	03
DTC143TE	EMT3 (SC-85)	50	100	4.7	150	1616	TL	180	8	3000	03
DTC143TUB	UMT3F (SOT-416/SC-75A)	50	100	4.7	200	2021	TL	180	8	3000	03
DTC143TUA	UMT3 (SOT-323/SC-70)	50	100	4.7	200	2021	T106	180	8	3000	03
DTC143TKA	SMT3 (SOT-346/SC-59)	50	100	4.7	200	2928	T146	180	8	3000	03

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Collector-base voltage	VCBO				50	V
Collector-emitter voltage	VCEO				50	V
Emitter-base voltage	VEBO				5	V
Collector current	IC				100	mA
Junction temperature	Tj				150
Range of storage temperature	Tstg		-55		+150
Collector-base breakdown voltage	BVCBO	IC = 50A	50	-	-	V
Collector-emitter breakdown voltage	BVCEO	IC = 1mA	50	-	-	V
Emitter-base breakdown voltage	BVEBO	IE = 50A	5	-	-	V
Collector cut-off current	ICBO	VCB = 50V	-	-	0.5	A
Emitter cut-off current	IEBO	VEB = 4V	-	-	0.5	A
Collector-emitter saturation voltage	VCE(sat)	IC / IB = 5mA / 0.25mA	-	-	0.15	V
DC current gain	hFE	VCE = 5V, IC = 1mA	100	250	600	-
Input resistance	R1		3.5	4.7	5.9	k
Transition frequency	fT*2	VCE = 10V, IE = -5mA, f = 100MHz	-	250	-	MHz