Silicon Carbide Power MOSFET SGKS KM040120-R Designed for Enhanced Efficiency and Thermal Management
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Product Description
Product Overview
This Silicon Carbide Power MOSFET features high breakdown voltage and low on-resistance, enabling high switching speeds and low capacitance. It includes a fast-recovery body diode with low reverse recovery charge. Designed for enhanced system efficiency, reduced thermal requirements, and improved power density, this component is ideal for applications requiring high switching frequencies and parallel operation. It is halogen-free and compliant with standards.
Product Attributes
- Brand: Gokeic
- Material: Silicon Carbide (SiC)
- Certifications: Halogen-free, compliant with standards
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Remarks |
| Maximum Ratings | |||||
| Drain-Source Voltage | VDS | 1200 | V | ||
| Gate-Source Voltage (Dynamic) | VGS(dyn) | V | |||
| Gate-Source Voltage (Static) | VGS(stat) | V | |||
| Continuous Drain Current | ID@25 | 70 | A | ||
| Pulsed Drain Current | IDM | A | |||
| Power Dissipation | PD | W | |||
| Operating and Storage Temperature | TJ, TSTG | ||||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0V, ID = 1mA | |
| Gate Threshold Voltage | VGS(th) | V | VDS = 20V, ID = 1mA | ||
| Zero Gate Voltage Drain Current | IDSS | mA | VDS = 1200V, VGS = 0V | ||
| Gate Source Leakage Current | IGSS | mA | VDS = 0V, VGS = 20V | ||
| Drain-Source On-Resistance | RDS(on) | 40 | m | VGS = 18V, ID = 35A | |
| Forward Transconductance | gfs | S | VDS = 50V, ID = 35A | ||
| Single Avalanche Energy | EAS | mJ | ID = 35A, VDD = 100V, RG = 25 | ||
| Input Capacitance | Ciss | pF | VDS = 100V, VGS = 0V, f = 1MHz | ||
| Output Capacitance | Coss | pF | VDS = 100V, VGS = 0V, f = 1MHz | ||
| Transfer Capacitance | Crss | pF | VDS = 100V, VGS = 0V, f = 1MHz | ||
| Output Capacitance Stored Energy | Eoss | J | VDS = 400V, VGS = 0V | ||
| Body Diode Conduction Turn-on Energy | Eon_body | J | ID = 35A, VGS = 0V, VDD = 400V | ||
| Body Diode Conduction Turn-off Energy | Eoff_body | J | ID = 35A, VGS = 0V, VDD = 400V | ||
| Turn-on Delay Time | td(on) | ns | VGS = 18V, ID = 35A, RL = 11.4 | ||
| Rise Time | tr | ns | VGS = 18V, ID = 35A, RL = 11.4 | ||
| Turn-off Delay Time | td(off) | ns | VGS = 18V, ID = 35A, RL = 11.4 | ||
| Fall Time | tf | ns | VGS = 18V, ID = 35A, RL = 11.4 | ||
| Intrinsic Gate Resistance | Rg | ||||
| Gate-Source Charge | Qg | nC | VDS = 100V, ID = 35A | ||
| Gate-Drain Charge | Qgd | nC | VDS = 100V, ID = 35A | ||
| Total Gate Charge | Qg(tot) | nC | VDS = 100V, ID = 35A | ||
| Diode Characteristics | |||||
| Diode Forward Voltage | VSD | V | IS = 35A, VGS = 0V | ||
| Diode Continuous Forward Current | IS | A | |||
| Diode Pulsed Forward Current | ISM | A | |||
| Reverse Recovery Time | trr | ns | IS = 35A, VGS = 0V, VDD = 400V | ||
| Reverse Recovery Charge | Qrr | nC | IS = 35A, VGS = 0V, VDD = 400V | ||
| Reverse Recovery Peak Current | Irrm | A | IS = 35A, VGS = 0V, VDD = 400V | ||
| Thermal Resistance | |||||
| Junction-to-Case Thermal Resistance | RthJC | /W | |||
| Junction-to-Ambient Thermal Resistance | RthJA | /W | |||
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Sellina