Compact dual digital transistor ROHM EMH11T2R designed for inverter and driver interface applications
Product Overview
The EMH11, UMH11N, and IMH11A are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate two independent DTC114E chips within a single SOT-563 (EMT6), SOT-363 (UMT6), or SOT-457 (SMT6) package. This integration offers significant advantages, including reduced mounting costs and board space by half, while ensuring no interference between transistor elements. They are compatible with automatic mounting machines, facilitating efficient production processes.
Product Attributes
- Brand: ROHM
- Type: Dual Digital Transistors
- Package Types: SOT-563 (EMT6), SOT-363 (UMT6), SOT-457 (SMT6)
- Features: Independent transistor elements, suitable for automatic mounting.
Technical Specifications
| Model | Package | Package Size (mm) | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking | VCC (Max.) | IC(MAX.) | R1 | R2 | Power Dissipation (PD) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EMH11 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | H11 | 50V | 100mA | 10k | 10k | 150mW*2*3 (120mW per element max) |
| UMH11N | SOT-363 (UMT6) | 2021 | TN | 180 | 8 | 3000 | H11 | 50V | 100mA | 10k | 10k | 150mW*2*3 (120mW per element max) |
| IMH11A | SOT-457 (SMT6) | 2928 | T110 | 180 | 8 | 3000 | H11 | 50V | 100mA | 10k | 10k | 300mW*2*4 (200mW per element max) |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Electrical Characteristics (Ta = 25C) | VCC | 50 | V | |||
| VIN | -10 | 40 | V | |||
| IO | 50 | mA | ||||
| IC(MAX)*1 | 100 | mA | ||||
| Tj | 150 | |||||
| Tstg | -55 | +150 | ||||
| fT | VCE = 10V, IE = -5mA, f = 100MHz | 250 | - | MHz | ||
| Electrical Characteristics (Ta = 25C) | VI(off) | VCC = 5V, IO = 100A | - | - | 0.5 | V |
| VI(on) | VO = 0.3V, IO = 10mA | 3.0 | - | - | V | |
| VO(on) | IO = 10mA, II = 0.5mA | - | 100 | 300 | mV | |
| II | VI = 5V | - | - | 880 | A | |
| IO(off) | VCC = 50V, VI = 0V | - | - | 500 | nA | |
| GI | VO = 5V, IO = 5mA | 30 | - | - | - | |
| R1 | 7 | 10 | 13 | k | ||
| R2/R1 | 0.8 | 1.0 | 1.2 | - |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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