Switching and Interface Solutions Using ROHM DTC144TUAT106 NPN Digital Transistor with Bias Resistors
Product Overview
The DTC144T series are NPN digital transistors featuring built-in bias resistors, simplifying inverter circuit configurations by eliminating the need for external input resistors. These transistors are designed with thin-film resistors offering complete isolation for negative input biasing and eliminating parasitic effects, making circuit design straightforward. They are suitable for switching, inverter, interface, and driver circuit applications. Complementary PNP types and complex transistor series are also available. This series is Lead-Free and RoHS Compliant.
Product Attributes
- Brand: ROHM
- Certifications: Lead Free/RoHS Compliant
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking | VCEO (V) | IC (mA) | R1 (k) | Power Dissipation (mW) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| DTC144TM | VMT3 | 1212 | T2L | 180 | 8 | 8000 | 06 | 50 | 100 | 47 | 150*1 |
| DTC144TE | EMT3 | 1616 | TL | 180 | 8 | 3000 | 06 | 50 | 100 | 47 | 150*1 |
| DTC144TUA | UMT3 | 2021 | T106 | 180 | 8 | 3000 | 06 | 50 | 100 | 47 | 200*1 |
| DTC144TKA | SMT3 | 2928 | T146 | 180 | 8 | 3000 | 06 | 50 | 100 | 47 | 200*1 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 5 | - | - | V |
| Collector cut-off current | ICBO | VCB = 50V | - | - | 0.5 | A |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | 0.5 | A |
| Collector-emitter saturation voltage | VCE(sat) | IC / IB = 5mA / 0.5mA | - | - | 0.3 | V |
| DC current gain | hFE | VCE = 5V, IC = 1mA | 100 | 250 | 600 | - |
| Input resistance | R1 | - | 32.9 | 47 | 61.1 | k |
| Transition frequency | fT*2 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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