Low RDS ON Power MOSFET Shenzhen ruichips Semicon RU8205C6 N Channel for Power Management Applications
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Product Description
Product Overview
The RU8205C6 is a N-Channel Advanced Power MOSFET featuring a super high dense cell design for low RDS(ON) and reliable performance. It is available in lead-free and green devices (RoHS compliant) and is suitable for power management applications.
Product Attributes
- Brand: Ruichips Semiconductor Co., Ltd
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 20 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=20V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current (IDSS) | TJ=125C | 30 | A | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 0.5 | 0.7 | 1.5 | V |
| Gate Leakage Current (IGSS) | VGS=10V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=4.5V, IDS=6A | 18 | 22 | m | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=2.5V, IDS=5A | 23 | 28 | m | |
| Diode Forward Voltage (VSD) | ISD=1A, VGS=0V | 1 | V | ||
| Reverse Recovery Time (trr) | ISD=1A, dlSD/dt=100A/s | 15 | ns | ||
| Reverse Recovery Charge (Qrr) | 8 | nC | |||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | 1.5 | |||
| Input Capacitance (Ciss) | VGS=0V, VDS=10V, Frequency=1.0MHz | 590 | pF | ||
| Output Capacitance (Coss) | 125 | pF | |||
| Reverse Transfer Capacitance (Crss) | 90 | pF | |||
| Turn-on Delay Time (td(ON)) | VDD=10V, IDS=6A, VGEN=4.5V,RG=6 | 8 | ns | ||
| Turn-on Rise Time (tr) | 15 | ns | |||
| Turn-off Delay Time (td(OFF)) | 33 | ns | |||
| Turn-off Fall Time (tf) | 13 | ns | |||
| Total Gate Charge (Qg) | VDS=16V, VGS=4.5V, IDS=6A | 10 | nC | ||
| Gate-Source Charge (Qgs) | 1.6 | ||||
| Gate-Drain Charge (Qgd) | 3.4 | ||||
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 20 | V | |||
| Gate-Source Voltage (VGSS) | 12 | V | |||
| Maximum Junction Temperature (TJ) | 150 | C | |||
| Storage Temperature Range (TSTG) | -55 | 150 | C | ||
| Diode Continuous Forward Current (IS) | TA=25C, Mounted on Large Heat Sink | 1.7 | A | ||
| Pulse Drain Current (IDP) | 300s Pulse, Tested TA=25C | 24 | A | ||
| Continuous Drain Current (ID) | VGS=4.5V, TA=25C | 6 | A | ||
| Continuous Drain Current (ID) | VGS=4.5V, TA=70C | 4.5 | A | ||
| Maximum Power Dissipation (PD) | TA=25C | 1.25 | W | ||
| Maximum Power Dissipation (PD) | TA=70C | 0.75 | W | ||
| Thermal Resistance-Junction to Case (RqJC) | - | C/W | |||
| Thermal Resistance-Junction to Ambient (RqJA) | 100 | C/W | |||
| Avalanche Ratings | |||||
| Avalanche Energy, Single Pulsed (EAS) | TBD | mJ | |||
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