PNP Digital Transistor ROHM DTA143EU3T106 Featuring Built in Bias Resistors for Inverter and Interface Circuit

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Product Description

Product Overview

The DTA143E series are PNP digital transistors featuring built-in bias resistors (R1 = R2 = 4.7k). This integration simplifies circuit design by eliminating the need for external input resistors, enabling inverter circuit configurations with ease. Designed for straightforward on/off condition settings, these transistors are ideal for applications such as inverters, interfaces, and drivers. Complementary NPN types are also available in the DTC143E series.

Product Attributes

Brand: ROHM
Type: PNP Digital Transistor (Bias Resistor Built-in Transistor)
Built-in Resistors: R1 = R2 = 4.7k

Technical Specifications

Model	Package	Package Size	Taping Code	Reel Size (mm)	Tape Width (mm)	Basic Ordering Unit (pcs)	Marking	VCC (Max.)	IC(MAX.)	PD (mW)	VCC (Absolute Max.)	VIN (Absolute Max.)	IO (Absolute Max.)	IC(MAX) (Absolute Max.)	Tj (Absolute Max.)	Tstg (Range)
DTA143EM	SOT-723	1212	T2L	180	8	3000	13	-50V	-100mA	150	-50 V	-30 to 10 V	-100 mA	-100 mA	150	-55 to +150
DTA143EEB	SOT-416FL	1616	TL	180	8	3000	13	-50V	-100mA	150	-50 V	-30 to 10 V	-100 mA	-100 mA	150	-55 to +150
DTA143EE	SOT-416	1616	TL	180	8	3000	13	-50V	-100mA	150	-50 V	-30 to 10 V	-100 mA	-100 mA	150	-55 to +150
DTA143EUB	SOT-323FL	2021	TL	180	8	3000	13	-50V	-100mA	200	-50 V	-30 to 10 V	-100 mA	-100 mA	150	-55 to +150
DTA143EU3	SOT-323	2021	T106	180	8	3000	13	-50V	-100mA	200	-50 V	-30 to 10 V	-100 mA	-100 mA	150	-55 to +150
DTA143EKA	SOT-346	2928	T146	180	8	3000	13	-50V	-100mA	200	-50 V	-30 to 10 V	-100 mA	-100 mA	150	-55 to +150
Electrical Characteristics (Ta = 25C)
Parameter	Conditions				Min.	Typ.	Max.	Unit
VI(off)	VCC = -5V, IO = -100A				-	-	-0.5	V
VI(on)	VO = -0.3V, IO = -20mA				-3	-	-	V
VO(on)	IO = -10mA, II = -0.5mA				-	-100	-300	mV
II	VI = -5V				-	-	-1.8	mA
IO(off)	VCC = -50V, VI = 0V				-	-	-500	nA
GI (DC current gain)	VO = -5V, IO = -10mA				30	-	-
R1 (Input resistance)					-	3.29	6.11	k
R2/R1 (Resistance ratio)					-	0.8	1.2
fT (Transition frequency) *1	VCE = -10V, IE = 5mA, f = 100MHz				-	250	-	MHz