N Channel Power MOSFET Shenzhen ruichips Semicon RU7080S R with 75A Diode Continuous Forward Current

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The RU7080S is an N-Channel Advanced Power MOSFET designed for high-performance applications. It features ultra-low on-resistance, fast switching speeds, and a high operating temperature of 175C, making it suitable for demanding environments. This device is 100% avalanche tested and available in lead-free and green (RoHS compliant) options.

Product Attributes

Brand: Ruichips Semiconductor
Origin: Shenzhen City
Certifications: RoHS Compliant (Lead Free and Green Devices Available)

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
V_DSS	Drain-Source Voltage				70	V
V_GSS	Gate-Source Voltage				±25	V
T_J	Maximum Junction Temperature				175	°C
T_STG	Storage Temperature Range		-55		175	°C
I_S	Diode Continuous Forward Current	TC=25°C			75	A
I_DP	Pulse Drain Current	Ø300µs Pulse, Tested TC=25°C			300	A
I_D	Continuous Drain Current	V_GS=10V, TC=25°C			80	A
I_D	Continuous Drain Current	V_GS=10V, TC=100°C			56	A
P_D	Maximum Power Dissipation	TC=25°C			111	W
P_D	Maximum Power Dissipation	TC=100°C			55	W
R_θJC	Thermal Resistance-Junction to Case			1.35		°C/W
R_θJA	Thermal Resistance-Junction to Ambient			62.5		°C/W
E_AS	Avalanche Energy, Single Pulsed	Ø156 mJ			156	mJ
Electrical Characteristics
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_DS=250µA	70			V
IDSS	Zero Gate Voltage Drain Current	V_DS=70V, V_GS=0V		1		µA
IDSS	Zero Gate Voltage Drain Current	TJ=125°C		30		µA
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_DS=250µA	2	4		V
IGSS	Gate Leakage Current	V_GS=±25V, V_DS=0V			±100	nA
RDS(ON)	Drain-Source On-state Resistance	V_GS=10V, I_DS=40A		7	9	mΩ
VSD	Diode Forward Voltage	I_SD=75A, V_GS=0V		1.2		V
trr	Reverse Recovery Time	I_SD=75A, dlSD/dt=100A/µs			106	ns
Qrr	Reverse Recovery Charge				56	nC
RG	Gate Resistance	V_GS=0V,VDS=0V,F=1MHz			1.2	Ω
Ciss	Input Capacitance	V_GS=0V, V_DS=30V, Frequency=1.0MHz		1800		pF
Coss	Output Capacitance			380		pF
Crss	Reverse Transfer Capacitance			105		pF
td(ON)	Turn-on Delay Time	VDD=30V,IDS=75A, VGEN=10V,RG=4.7Ω		15		ns
tr	Turn-on Rise Time			94		ns
td(OFF)	Turn-off Delay Time			46		ns
tf	Turn-off Fall Time			32		ns
Qg	Total Gate Charge	VDS=56V, VGS=10V, IDS=75A		50		nC
Qgs	Gate-Source Charge			12		nC
Qgd	Gate-Drain Charge			19		nC